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PJD80N06

Description
60V N-Channel Enhancement Mode MOSFET
File Size369KB,8 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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60V N-Channel Enhancement Mode MOSFET

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PPJD80N06
60V N-Channel Enhancement Mode MOSFET
Voltage
Features
60 V
Current
80 A
R
DS(ON) ,
V
GS
@10V, ID@20A<7mΩ
High switching speed
Improved dv/dt capability
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2011/65/EU
directive.
Green molding compound as per IEC61249 Std.
(Halogen Free)
TO-252
Mechanical Data
Case : TO-252 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0104 ounces, 0.297grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
T
C
=25
o
C
T
C
=100
o
C
T
C
=25
o
C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
I
D
P
D
E
AS
T
J
,T
STG
R
θJC
R
θJA
LIMIT
UNITS
V
V
A
60
+20
80
50
160
83
33
12
10
2.0
1.3
135
-55~150
1.5
62.5
o
W
A
A
W
mJ
o
Single Pulse Avalanche Energy
(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal resistance
(Note 4,5)
C
Junction to Case
Junction to Ambient
C/W
Limited only By Maximum Junction Temperature
July 9,2015-REV.00
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