PJCLAMP0502Q datasheet, PDF - EEWORLD Datasheet

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PJCLAMP0502Q: Descriptiondual ultra low capacitance esd protector array; File Size44KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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dual ultra low capacitance esd protector array

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PJClamp0502Q

DUAL ULTRA LOW CAPACITANCE ESD PROTECTOR ARRAY

This Dual Unidirectional ESD Protector Array family have been designed to protect

sensitive equipment against ESD in high speed transmission buses, operating at

5V and demanding the lowest insertion loss. This array offers an integrated

solution to protect up to 2 data lines in applications, where the board space is a

premium, in a Quad Flat no-Lead package that only occupies an area of 1.8 sq mm.

PRELIMINARY

SPECIFICATION FEATURES

IEC61000-4-2 ESD 20kV air, 15kV Contact Compliance

Low Leakage Current, Maximum of 1µA at rated voltage

Maximum Capacitance of 1pF per device at 0Vdc 1MHz

Peak Power Dissipation of 40W 8/20µs Waveform

Quad Flat No Lead package QFN (1.2x1.5 sq mm, Height: 0.75mm)

Lead Free Package 100% Tin Plating, Matte finish

APPLICATIONS

USB2.0 and IEEE 1394 Firewire Ports

RF Power Amplifier Protection

RF/Antenna Circuits

QFN 1.2x1.5 sq mm

MAXIMUM RATINGS (Per Device)

Rating

Peak Pulse Power (8/20µs Waveform)

Peak Pulse Current (8/20µs Waveform)

ESD Voltage (HBM Per MIL STD883C - Method 3015-6)

Operating Temperature Range

Storage Temperature Range

Symbol

PPM

ESD

stg

Value

-55 to +150

Units

°C

ELECTRICAL CHARACTERISTICS (Per Device)

Tj = 25°C

Parameter

Reverse Stand-Off Voltage

Reverse Breakdown Voltage

Reverse Leakage Current

Clamping Voltage (8/20µs)

Off State Junction Capacitance

Symbol

WRM

= 1mA

= 5V

I pp = 3A

0 Vdc Bias f = 1MHz

between 4&2 or 6&2

Conditions

Min

Typical

Max

Units

µA

1/25/2006

Page

www.panjit.com

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