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PJA63P02_R1_00001

Description
20V P-CHANNEL ENHANCEMENT MODE MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size221KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJA63P02_R1_00001 Overview

20V P-CHANNEL ENHANCEMENT MODE MOSFET

PJA63P02_R1_00001 Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
Other featuresULTRA LOW RESISTANCE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)2.9 A
Maximum drain-source on-resistance0.063 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeP-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1

PJA63P02_R1_00001 Preview

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PJA63P02
20V P-CHANNEL ENHANCEMENT MODE MOSFET
VOLTAGE
FEATURES
• R
DS(ON)
, V
GS
@-1.8V,I
D
@-2.3A<108 mΩ
• R
DS(ON)
, V
GS
@-4.5V,I
D
@-3.3A<63 mΩ
• Advanced Trench Process Technology
• High Density Cell Design For Ultra Low On-Resistance
• Specially Designed for DC/DC Converters
• Low Gate Charge
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
20 Volts
CURRENT
2.9 Amperes
MECHANICAL DATA
• Case: SOT-23 Package
• Terminals : Solderable per MIL-STD-750,Method 2026
• Apporx. Weight : 0.0003 ounces, 0.0084grams
• Marking : 63
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS (T
A
=25
O
C unless otherwise noted )
PAR AME T E R
D r a i n- S o ur c e Vo lta g e
Ga te - S o ur c e Vo lta g e
C o nti nuo us D ra i n C urr e nt
P uls e d D r a i n C urr e nt
P o we r D i s s i p a ti o n ( No te s 1 )
Typ i c a l The r ma l Re s i s ta nc e (No te s 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra tur e Ra ng e
S te a d y- S ta te
T
A
=2 5
O
C
S te a d y- S ta te
T
A
=2 5
O
C
S YMB OL
V
DS
V
GS
I
D
I
D M
P
D
R
θJ
A
T
J
,T
S TG
L IMIT
-20
+1 2
- 2 .9
-12
0 .8
155
- 5 5 to + 1 5 0
U N IT S
V
V
A
A
W
O
C /W
O
C
NOTES:
1. Mounted on 7.5cm FR-4 PCB .
2
November 04,2011-REV.00
PAGE . 1
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