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PJA3433

Description
30V P-Channel Enhancement Mode MOSFET – ESD Protected
File Size274KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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30V P-Channel Enhancement Mode MOSFET – ESD Protected

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PPJA3433
30V P-Channel Enhancement Mode MOSFET – ESD Protected
Voltage
Features
RDS(ON) , VGS@-4.5V, ID@-1.1A<370mΩ
RDS(ON) , VGS@-2.5V, ID@-0.5A<540mΩ
RDS(ON) , VGS@-2.5V, ID@-0.1A<970mΩ
Advanced Trench Process Technology
Specially Designed for Switch Load, PWM Application, etc.
ESD Protected 2KV HBM
Lead free in compliance with EU RoHS 2011/65/EU directive.
Green molding compound as per IEC61249 Std.
-30 V
Current
-1.1A
SOT-23
Unit: inch(mm)
(Halogen Free)
Mechanical Data
Case : SOT-23 Package
Terminals : Solderable per MIL-STD-750, Method 2026
Approx. Weight : 0.0003 ounces, 0.0084 grams
Marking : A33
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
(Note 4)
o
SYMBOL
V
DS
V
GS
I
D
I
DM
T
a
=25
o
C
Derate above 25
o
C
P
D
T
J
,T
STG
R
θJA
LIMIT
UNITS
V
V
A
A
W
mW/
o
C
o
-30
+8
-1.1
-4.4
1.25
10
-55~150
100
o
Operating Junction and Storage Temperature Range
Typical Thermal resistance
-
Junction to Ambient
(Note 3)
C
C/W
January 22,2015-REV.01
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