P6SMBJ33C-AU_R2_000A1 datasheet, PDF

P6SMBJ33C-AU_R2_000A1: DescriptionTrans Voltage Suppressor Diode, 600W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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P6SMBJ33C-AU_R2_000A1 Overview

Trans Voltage Suppressor Diode, 600W, 33V V(RWM), Bidirectional, 1 Element, Silicon, DO-214AA, SMB, 2 PIN

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	R-PDSO-C2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	UL RECOGNIZED
Maximum breakdown voltage	46.5 V
Minimum breakdown voltage	36.7 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation	600 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	BIDIRECTIONAL
Guideline	AEC-Q101; IEC-61000-4-2; TS 16949
Maximum repetitive peak reverse voltage	33 V
surface mount	YES
technology	AVALANCHE
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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