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P4SMAJ_07

Description
400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size95KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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P4SMAJ_07 Overview

400 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AC

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P4SMAJ SERIES
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR
VOLTAGE
FEATURES
• For surface mounted applications in order to optimize board space.
• Built-in strain relief
• Low inductance
• Plastic package has Underwriters Laboratory Flammability
Classification 94V-O
• High temperature soldering : 260°C /10 seconds at terminals
.096(2.44)
.078(2.00)
.062(1.60)
.047(1.20)
.114(2.90)
.098(2.50)
5.0 to 220 Volts
PEAK PULSE POWER
400 Watts
SMA/DO-214AC
Unit: inch (mm)
• Low profile package
• Glass passivated junction
.181(4.60)
.157(4.00)
• In compliance with EU RoHS 2002/95/EC directives
.012(.305)
.006(.152)
MECHANICAL DATA
• Case: JEDEC DO-214AC,Molded plastic over passivated junction.
• Terminals: Solder plated,solderable per MIL-STD-750, Method 2026
• Polarity: Color band denotes positive end (cathode)
• Standard Packaging:12mm tape (EIA-481)
• Weight: 0.002 ounce, 0.064 gram
.060(1.52)
.030(0.76)
.008(.203)
.002(.051)
.208(5.28)
.188(4.80)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA Suffix for types P4SMAJ5.0 thru types P4SMAJ220.
Electrical characteristics apply in both directions.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
R ating
Peak Pulse Power D i ssi pati on on T
A
= 25
O
C (Notes 1,2,5, Fi g.1)
Peak Forward Surge C urrent per Fi g.5 (Note 3)
Peak Pulse C urrent on 10/1000s waveform(Note 1)Fi g.2
Steady State Power D i ssi pati on (NOTE 4)
Operati ng Juncti on and Storage Temperature Range
Symbol
P
PPM
I
FSM
I
PPM
P
M(AV)
T
J
,T
STG
Value
400
40
see Table 1
1.0
-55 to +150
Uni ts
Watts
Amps
Amps
Watts
O
C
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
O
C per Fig. 2.
2. Mounted on 5.0mm
2
copper pads to each terminal.
3. 8.3ms single half sine-wave, or equivalent square wave, duty cycle = 4 pulses per minutes maximum.
4. Lead temperature at 75
O
C = T
L
.
5. Peak pulse power waveform is 10/1000uS.
STAD-MAY.25.2007
PAGE . 1
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