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P4KE56CA

Description
反向关断电压(典型值):47.8V 击穿电压(最小值):53.2V 极性:Bidirectional 箝位电压:77V 峰值脉冲电流(10/1000us):5.3A TVS 56V,Ppp=400W 双向
CategoryDiscrete semiconductor    TVS diode   
File Size421KB,7 Pages
ManufacturerCREATEK Microelectronics Co.,Ltd
Websitehttp://www.crea-tek.com/
CREATEK Microelectronics was founded in the United States and entered China in 2009 and reorganized with Chinese companies. It is mainly engaged in the design, manufacture and sales of IGBT, MOSFET, FRD, protection devices, planar magnets, and provides related application solutions. The headquarters is located in China, with a research and development center in San Francisco, a North American sales center, and sales offices in Shenzhen, Shanghai, Suzhou, Taiwan, China, and Singapore.
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P4KE56CA Overview

反向关断电压(典型值):47.8V 击穿电压(最小值):53.2V 极性:Bidirectional 箝位电压:77V 峰值脉冲电流(10/1000us):5.3A TVS 56V,Ppp=400W 双向

P4KE56CA Parametric

Parameter NameAttribute value
Reverse shutdown voltage (typ)47.8V
Breakdown voltage (minimum value)53.2V
polarityBidirectional
clamping voltage77V
Peak pulse current (10/1000us)5.3A

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Download Datasheet
P4KE Series
CREATEK Microelectronics
Power TVS in DO-41
Features
Glass passivated chip
400W peak pulse power(10/1000us)
High accuracy, 5% tolerance
Uni and Bidirectional unit
Low clamping voltage
Low Leakage current
Very fast response time
Bidirectional
1
1
2
2
Mechanical Data
Case:
DO-41
molded plastic Lead free;
RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Unidirectional
1
1
2
Applications
2
Computers
Telecom system
Industrial equipments
Consumer electronic applications
Other VCC bus and I/O interfaces
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power dissipation with a 10/1000us waveform
(1)
(1)
Symbol
P
PP
I
PP
I
FSM
T
J
, T
STG
Value
400
See Next Table
40
-55 to +150
Unit
W
A
A
Maximum peak reverse pulse current a 10/1000us waveform
Peak forward surge current 8.3ms single half sine-wave
Operating junction and storage temperature range
Notes:
(2 )
1.Non-repetitive current pulse,per Fi g.5 and detated above TA=25°C per Fig.1
2.Measured on 8.3ms single half sine-wave,or equivalent square wave,duty cycle=4 pulses per minute maximum
Rev. 1.0
www.crea-tek.com
1
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