P4KE Series
CREATEK Microelectronics
Power TVS in DO-41
Features
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Glass passivated chip
400W peak pulse power(10/1000us)
High accuracy, 5% tolerance
Uni and Bidirectional unit
Low clamping voltage
Low Leakage current
Very fast response time
Bidirectional
1
1
2
2
Mechanical Data
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Case:
DO-41
molded plastic Lead free;
RoHS compliant
Molding Compound Flammability Rating:
UL 94 V-0
Terminals:
High temperature soldering guaranteed:
260 °C/10 sec. at terminals
Unidirectional
1
1
2
Applications
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2
Computers
Telecom system
Industrial equipments
Consumer electronic applications
Other VCC bus and I/O interfaces
Absolute Maximum Ratings
Ratings at 25 °C, ambient temperature unless otherwise specified
Parameter
Peak pulse power dissipation with a 10/1000us waveform
(1)
(1)
Symbol
P
PP
I
PP
I
FSM
T
J
, T
STG
Value
400
See Next Table
40
-55 to +150
Unit
W
A
A
℃
Maximum peak reverse pulse current a 10/1000us waveform
Peak forward surge current 8.3ms single half sine-wave
Operating junction and storage temperature range
Notes:
(2 )
1.Non-repetitive current pulse,per Fi g.5 and detated above TA=25°C per Fig.1
2.Measured on 8.3ms single half sine-wave,or equivalent square wave,duty cycle=4 pulses per minute maximum
Rev. 1.0
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1
P4KE Series
CREATEK Microelectronics
Typical Characteristics
(T
amb
= 25
°C
unless otherwise specified)
Fig. 1 - Pulse Derating Curve
Peak Pulse Derating in Percentage of Peak
Power or Current, (%)
100
Fig. 2 - Maximum Non-Repetitive Surge Current
50
1
Peak Forward Surge Current, (A)
75
40
300
T
J
= T
J
max.
120
100
8.3 ms Single Half Sine-Wave
30
50
20
25
10
0
0
25
50
75
100
125
150
175
200
Ambient Temperature ,T
A
(°C）
0
1
10
Number of Cycles at 60 Hz
100
Fig. 3 - Steady State Power Derating Curve
1.0
100
Fig. 4 - Peak Pulse Power Rating Curve
Steady State Power Dissipation, (W)
0.8
10
0.4
Peak Power (kW)
0.6
1
0.2
0.0
0
25
50
75
100
125
150
175
200
0.1
0.1
1
10
100
1000
10000
Lead Temperature , T
L
（°C）
Pulse Width ,t
d
(us)
Fig. 5 - Pulse Waveform
100000
Fig. 6 - Typical Junction Capacitance
100
Peak Pulse Current , (% )
Tr=10
us
Peak Value
(Ipp)
T
J
= 25
°C
Pulse Width (td) is defined as the
point where the peak current
0
decays to 50 %
0
Ipp
of
ˇ
10000
Junction Capacitance,C
J
(pF)
ˇ
ˊ
ˇ
Uni-directional @V
RWM
Bi-directional
@zero bias
Uni-directional
@zero bias
50
td
0.2
100
0.5
Half Value = Ipp
76
2
1
50
1.5
33
10/1000
usec.
2
as
Waveform
23
defined by
R.E.A.
13
3
4
10
1000
100
ˇ
10
T
J
=25 °C
f=1.0MHz
1
1
10
Bi-directional @V
RWM
0
0
1
2
Time , (ms)
3
4
100
1000
Reverse Breakdown Voltage,V
BR
(V)
Rev. 1.0
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5
Parametric
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GD32 MCU
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