NJ4N60A-LI datasheet, PDF - EEWORLD Datasheet

NJ4N60 POWER MOSFET

4.0A 600V N-CHANNEL POWER MOSFET

DESCRIPTION

The

NJ4N60

is a high voltage MOSFET and is designed to

have better characteristics, such as fast switching time, low gate

charge, low on-state resistance and have a high rugged

avalanche characteristics. This power MOSFET is usually used at

high speed switching applications in power supplies, PWM motor

controls, high efficient DC to DC converters and bridge circuits.

1

TO-220

FEATURES

* V

DS

= 600V

* I

D

=

4.0A

* R

DS(ON)

=2.5Ω@V

GS

= 10V.

* Ultra Low gate charge (typical

15nC)

* Low reverse transfer capacitance (C

RSS

= typical

8.0

pF)

* Fast switching capability

* Avalanche energy specified

* Improved dv/dt capability, high ruggedness

1

TO-220F

1

TO-251

SYMBOL

1

TO-252

ORDERING INFORMATION

Ordering Number

NJ4N60-LI

NJ4N60-BL

NJ4N60F-LI

NJ4N60A-LI

NJ4N60D-TR

NJ4N60D-LI

Note:

Pin Assignment: G: Gate

D: Drain

Package

TO-220

TO-220F

TO-251

TO-252

S: Source

Pin Assignment

1

2

3

G

D

S

G

D

S

G

D

S

G

D

S

G

D

S

G

D

S

Packing

Tape

Box

Bulk

Tube

Tape

Ree

Tube

NJ4N60 POWER MOSFET

ABSOLUTE MAXIMUM RATINGS

(T

C

= 25° , unless otherwise specified)

PARAMETER

Drain-Source Voltage

Gate-Source Voltage

Avalanche Current (Note 2)

Continuous

Drain Current

Pulsed (Note 2)

SYMBOL

V

DSS

V

GSS

I

AR

I

D

I

DM

RATINGS

600

±30

4.4

4.0

16

UNIT

V

A

Avalanche Energy

Single Pulsed

4N60-E

(Note 3)

E

AS

200

mJ

Repetitive (Note 2)

Peak Diode Recovery dv/dt (Note 4)

TO-220

TO-220F

Power Dissipation

TO-251

TO-252

E

AR

dv/dt

10.6

4.5

106

36

50

mJ

V/ns

P

D

W

Junction Temperature

T

J

+150

°

Operating Temperature

T

OPR

-55 ~ +150

°

Storage Temperature

T

STG

-55 ~ +150

°

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating : Pulse width limited by maximum junction temperature

3. L = 30mH, I

AS

= 4A, V

DD

= 50V, R

G

= 25 , Starting T

J

= 25°C

4. I

SD

4.4A, di/dt 200A/ s, V

DD

BV

DSS

, Starting T

J

= 25°C

THERMAL DATA

PARAMETER

PACKAGE

TO-220

TO-220F

TO-251

TO-252

TO-220

TO-220F

TO-251

TO-252

SYMBOL

RATINGS

62.5

110

1.18

3.47

2.5

UNIT

Junction to Ambient

JA

° /W

Junction to Case

Jc

° /W

NJ4N60 POWER MOSFET

ELECTRICAL CHARACTERISTICS

(T

C

=25° , unless otherwise specified)

PARAMETER

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

Gate-Source Leakage Current

SYMBOL

BV

DSS

I

DSS

TEST CONDITIONS

MIN TYP MAX UNIT

600

V

10

A

100 nA

-100 nA

V/°

4.0

2.5

670

90

11

35

100

130

100

60

120

220

120

20

V

Forward

Reverse

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

V

GS(TH)

V

DS

= V

GS

, I

D

= 250 A

Static Drain-Source On-State

4N60

Resistance

4N60-E

R

DS(ON)

4N60-N

V

GS

= 10 V, I

D

= 2.2A

4N60-Q

4N60-S

DYNAMIC CHARACTERISTICS

Input Capacitance

C

ISS

V

DS

= 25V, V

GS

= 0V,

Output Capacitance

C

OSS

f = 1MHz

Reverse Transfer Capacitance

C

RSS

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t

D(ON)

4N60

4N60-E

Turn-On Rise Time

4N60-N

t

R

4N60-Q

4N60-S

V

DD

= 300V, I

D

= 4.0A,

R

G

= 25 (Note 1, 2)

Turn-Off Delay Time

t

D(OFF)

4N60

4N60-E

Turn-Off Fall Time

4N60-N

t

F

4N60-Q

4N60-S

Total Gate Charge

Q

G

V

DS

= 480V,I

D

= 4.0A,

Gate-Source Charge

Q

GS

V

GS

= 10V (Note 1, 2)

Gate-Drain Charge

Q

GD

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Drain-Source Diode Forward Voltage

V

SD

V

GS

= 0V, I

S

= 4.4A

Maximum Continuous Drain-Source Diode

I

S

Forward Current

Maximum Pulsed Drain-Source Diode

I

SM

Forward Current

Reverse Recovery Time

t

rr

V

GS

= 0 V, I

S

= 4.4A,

dI

F

/dt = 100 A/ s (Note 1)

Reverse Recovery Charge

Q

RR

Notes: 1. Pulse Test: Pulse width 300 s, Duty cycle 2%

2. Essentially independent of operating temperature

V

GS

= 0V, I

D

= 250 A

V

DS

= 600V, V

GS

= 0V

V

GS

= 30V, V

DS

= 0V

I

GSS

V

GS

= -30V, V

DS

= 0V

BV

DSS

/ T

J

I

D

=250 A,Referenced to 25°C

0.6

2.0

2.2

520

70

8

13

70

60

100

45

40

25

100

70

180

35

70

15

3.4

7.1

pF

ns

nC

V

A

ns

C

1.4

4.4

17.6

250

1.5

NJ4N60 POWER MOSFET

TEST CIRCUITS AND WAVEFORMS

D.U.T.

+

V

DS

-

+

-

L

R

G

Driver

Same Type

as D.U.T.

* dv/dt controlled by R

G

* I

SD

controlled by pulse period

* D.U.T.-Device Under Test

V

DD

V

GS

Peak Diode Recovery dv/dt Test Circuit

V

GS

(Driver)

Period

P.W.

D=

P. W.

Period

V

GS

= 10V

I

FM

, Body Diode Forward Current

I

SD

(D.U.T.)

I

RM

Body Diode Reverse Current

di/dt

Body Diode Recovery dv/dt

V

DS

(D.U.T.)

V

DD

Body Diode

Forward Voltage Drop

Peak Diode Recovery dv/dt Waveforms

NJ4N60 POWER MOSFET

TEST CIRCUITS AND WAVEFORMS (Cont.)

V

DS

90%

V

GS

10%

t

D(ON)

t

R

t

D(OFF)

t

F

Switching Test Circuit

Switching Waveforms

V

GS

Q

G

10V

Q

GS

Q

GD

Charge

Gate Charge Test Circuit

Gate Charge Waveform

BV

DSS

I

AS

I

D(t)

V

DD

V

DS(t)

t

p

Time

Unclamped Inductive Switching Test Circuit

Unclamped Inductive Switching Waveforms

NJ4N60A-LI

NJ4N60A-LI Overview

NJ4N60A-LI Preview

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