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Dual N-Channel Enhancement Mode Field Effect Transistor
Conditions
Min
Typ
Max
Units
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 40 V, V
GS
= 0 V
T
J
= 125°C
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250 µA
T
J
= 125°C
Static Drain-Source On-Resistance
V
GS
= 10 V, I
D
= 0.51 A
T
J
= 125°C
V
GS
= 4.5 V, I
D
= 0.35 A
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
V
GS
= 10 V, V
DS
= 10 V
V
DS
= 10 V, I
D
= 0.51 A
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
1.5
400
1
0.8
1.9
1.5
1
1.7
1.6
50
1
500
100
-100
nA
nA
V
µA
ON CHARACTERISTICS
(Note 2)
Gate Threshold Voltage
2.5
2.2
2
3.5
4
A
mS
V
Ω
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
D(on)
t
r
t
D(off)
t
f
Q
g
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
20
13
5
pF
pF
pF
SWITCHING CHARACTERISTICS
(Note 2)
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 25 V,
I
D
= 0.51 A, V
GS
= 10 V
V
DD
= 25 V, I
D
= 0.25 A,
V
GS
= 10 V, R
GEN
= 25
Ω
6
6
11
5
1
0.19
0.33
20
20
20
20
nC
nC
nC
nS
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2
友台半导½有限公司
UMW
Symbol
I
S
I
SM
V
SD
Notes:
R
UMW
NDC7002N
SOT23-6
Dual N-Channel Enhancement Mode Field Effect Transistor
Conditions
Min
Typ
Max
Units
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Parameter
DRAIN-SOURCE DIODE CHARACTERISTICS
Maximum Continuous Source Current
Maximum Pulse Source Current
(Note 2)
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 0.51 A
(Note 2)
0.8
0.51
1.5
1.2
A
A
V
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is guaranteed by
design while R
θ
CA
is determined by the user's board design.
P
D
(
t
) =
R
θ
J A
t
)
(
T
J
−
T
A
=
R
θ
J C
R
θ
CA
t
)
+
(
T
J
−
T
A
=
I
2
(
t
) ×
R
DS
(
ON
)
D
T
J
Typical R
θ
JA
for single device operation using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment:
o
2
a. 130 C/W when mounted on a 0.125 in pad of 2oz cpper.
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