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MUR2020CT

Description
Ultra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes
CategoryDiscrete semiconductor    diode   
File Size100KB,2 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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MUR2020CT Overview

Ultra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes

Features

Product Name: Ultra-Fast Recovery Rectifier Diodes


Product model: MUR2020CT


product features:


Me:20.0A


VRRM :100V-600V


Glass passivated chip


High forward surge current capability


High surge forward current capability



use:


Fast rectifier


High speed switching



product data:


Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 200V



Average Forward Current IF(AV) Average forward current: 20A



Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 65A



Junction Temperature TJ :-55 to +150 ℃



Storage Temperature TSTG storage temperature: -55 to +175 ℃



Peak Forward Voltage (IFM=10.0A) VFM Forward peak voltage: 0.95V



Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA


IRRM2 (Ta=125℃) Reverse peak current: 500μA



Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns



Thermal Resistance (Typical) RθJ-C Thermal Resistance (Typical): 2.0 ℃/W



Package: TO-220AC


MUR2020CT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
Maximum non-repetitive peak forward current125 A
Number of components1
Maximum operating temperature175 °C
Maximum output current20 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.035 µs
surface mountNO
Base Number Matches1

MUR2020CT Preview

Download Datasheet
MUR2010CT THRU MUR2060CT
超快恢复整流二极管
Ultra-Fast Recovery Rectifier Diodes
■特征
Features
■外½尺寸和印记
Outline Dimensions and Mark
I
o
20.0A
V
RRM
100V~600V
玻璃钝化芯片
Glass passivated chip
TO-220AC
.412(10.5)
MAX
.154(3.91)
.148(3.74)
.185(4.70)
.175(4.44)
.055(1.40)
.045(1.14)
耐正向浪涌电流½力高
High surge forward current capability
DIA
.113(2.87)
.103(2.62)
.594(15.1)
.587(14.9)
PIN1
2
■用途
Applications
.16(4.06)
.14(3.56)
.037(0.94)
.027(0.68)
.11(2.79)
.10(2.54)
.56(14.22)
.53(13.46)
快速整流用
High speed switching
.205(5.20)
.195(4.95)
PIN1
CASE
.025(0.64)
.014(0.35)
PIN2
Dimensions in inches and (millimeters)
■极限值(绝对最大额定值)
Limiting Values(Absolute Maximum Rating)
参数名称
Item
反向重复峰值电压
Repetitive Peak Reverse Voltage
平均整流输出电流
Average Rectified Output Current
正向(不重复)浪涌电流
Surge(Non-repetitive)Forward Current
正向浪涌电流的平方对电流浪涌持续
时间的积分值
Current Squared Time
贮存温度
Storage Temperature
结温
Junction Temperature
符号 单½
Symbol Unit
V
RRM
I
o
I
FSM
I
2
t
V
A
A
条件
Conditions
MUR-CT
2010 2015 2020 2040 2060
100
150
200
20
125
400
600
60H
Z
正弦波,电阻负½½,T
a
=25℃
60H
Z
sine wave, R- load, T
a
=25℃
60H
Z
正弦波,一个周期,T
a
=25℃
60H
Z
sine wave, 1 cycle, T
a
=25℃
1ms≤t<8.3ms T
j
=25℃,单个二
A
2
s
极管
1ms≤t<8.3ms T
j
=25℃,Rating
of per diode
65
T
stg
T
j
-55 ~ +150
-55 ~ +175
■电特性
(T
a
=25℃
除非另有规定)
Electrical Characteristics
(T
a
=25℃ Unless otherwise specified)
参数名称
Item
正向峰值电压
Peak Forward Voltage
反向峰值电流
Peak Reverse Current
反向恢复时间
Reverse Recovery Time
热阻
Thermal Resistance
符号
Symbol
V
FM
I
RRM1
I
RRM2
Trr
R
θ
J-C
单½
Unit
V
μA
ns
测试条件
Test Condition
I FM =10.0A
V
RM
=V
RRM
 
Ta=25℃
 
Ta=125℃
I
F
=0.5A I
RM
=1A
I
RR
=0.25A
MUR-CT
2010 2015 2020 2040 2060
0.95
10
500
35
50
1.25
1.7
℃/W
结和壳之间 
Between junction and case
2.0
Document Number 0167
Rev. 1.0, 22-Sep-11
扬州扬杰电子科技股½有限公司
Yangzhou Yangjie Electronic Technology Co., Ltd
www.21yangjie.com
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