MUR1015CT datasheet, PDF - EEWORLD Datasheet

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MUR1015CT: DescriptionUltra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes; CategoryDiscrete semiconductor; File Size100KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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MUR1015CT Overview

Ultra-Fast Recovery Rectifier Diodes Ultra-Fast Recovery Rectifier Diodes

Features

Product Name: Ultra-Fast Recovery Rectifier Diodes

Product model: MUR1015CT

product features:

Io: 16.0A

VRRM: 100V-600V

Glass passivated chip

High forward surge current capability

High surge forward current capability

use:

Fast rectifier

High speed switching

product data:

Repetitive Peak Reverse Voltage VRRM Reverse repetitive peak voltage: 150V

Average Forward Current IF(AV) Average forward current: 10A

Surge(Non-repetitive)Forward Current IFSM Forward (non-repetitive) surge current: 55A

Current Squared Time I^2*t The integral value of the square of the forward surge current and the current surge duration: 12 A^2*S

Junction Temperature TJ Junction temperature: -55 to +150 ℃

Storage Temperature TSTG storage temperature: -55 to +175 ℃

Peak Forward Voltage (IFM=5.0A) VFM Forward peak voltage: 0.95V

Peak Reverse Current (VRM=VRRM) IRRM1 (Ta=25℃) Reverse peak current: 10μA

IRRM2 (Ta=125℃) Reverse peak current: 500μA

Reverse Recovery time (IF=0.5A, IR=1A, IRR=0.25A) trr Reverse recovery time: 35ns

Thermal Resistance (Typical) RθJ-C Thermal Resistance (Typical): 2.0 ℃/W

Package: TO-220AB

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MUR1010CT THRU MUR1060CT

超快恢复整流二极管

Ultra-Fast Recovery Rectifier Diodes

■特征

●

Features

■外½尺寸和印记

Outline Dimensions and Mark

16.0A

●

RRM

100V~600V

●

玻璃钝化芯片

Glass passivated chip

●

TO-220AB

.412(10.5)

MAX

.113(2.87)

.103(2.62)

.154(3.91)

.148(3.74)

.185(4.70)

.175(4.44)

.055(1.40)

.045(1.14)

耐正向浪涌电流½力高

High surge forward current capability

DIA

.594(15.1)

.587(14.9)

PIN1 2

.16(4.06)

.14(3.56)

.11(2.79)

.10(2.54)

.56(14.22)

.53(13.46)

■用途

●

Applications

.037(0.94)

.027(0.68)

快速整流用

High speed switching

.105(2.67)

.095(2.41)

.105(2.67)

.095(2.41)

.025(0.64)

.014(0.35)

PIN1

PIN2

PIN3

CASE

Dimensions in inches and (millimeters)

■极限值（绝对最大额定值）

Limiting Values（Absolute Maximum Rating）

参数名称

Item

反向重复峰值电压

Repetitive Peak Reverse Voltage

平均整流输出电流

Average Rectified Output Current

正向（不重复）浪涌电流

Surge(Non-repetitive)Forward Current

正向浪涌电流的平方对电流浪涌持续

时间的积分值

Current Squared Time

贮存温度

Storage Temperature

结温

Junction Temperature

符号单½

Symbol Unit

RRM

FSM

测试条件

Conditions

MUR-CT

1010

100

1015

150

1020

200

1040

400

1060

600

60H

正弦波，电阻负½½，T

=25℃

60H

sine wave, R- load, T

=25℃

60H

正弦波，一个周期，T

=25℃

60H

sine wave, 1 cycle, T

=25℃

1ms≤t＜8.3ms T

=25℃,单个二

极管

1ms≤t＜8.3ms T

=25℃,Rating

of per diode

stg

℃

-55 ~ +150

-55 ~ +175

■电特性

（T

=25℃

除非另有规定）

Electrical Characteristics

（T

=25℃ Unless otherwise specified）

参数名称

Item

正向峰值电压

Peak Forward Voltage

反向峰值电流

Peak Reverse Current

反向恢复时间

Reverse Recovery Time

热阻

Thermal Resistance

符号

Symbol

RRM1

RRM2

Trr

单½

Unit

μA

测试条件

Test Condition

I FM =5.0A

RRM

Ta=25℃

Ta=125℃

=0.5A I

=1A

=0.25A

MUR-CT

1010

1015

0.95

500

1020

1040

1.25

1060

1.7

结和壳之间

J-C

℃/W

Between junction and case

2.0

Document Number 0163

Rev. 1.0, 22-Sep-11

扬州扬杰电子科技股½有限公司

Yangzhou Yangjie Electronic Technology Co., Ltd.

www.21yangjie.com

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