MT40CB18T1
Thyristor/Diode Modules
V
RRM
/ V
DRM
I
FAV
/ I
TAV
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
800 to 1800V
40Amp
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT40CB08T1
MT40CB12T1
MT40CB16T1
MT40CB18T1
V
RRM/
V
DRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
◆Diode
Maximum Ratings
Symbol
I
D
I
FSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
Weight
Item
Tc=85℃
Conditions
t=10mS Tvj =45℃
a.c.50HZ;r.m.s.;1min
Values
40
1000
5000
3000
-40 to +125
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
g
Output Current(D.C.)
Surge forward current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Module（Approximately）
To terminals(M5)
To heatsink(M6)
3±15%
5±15%
100
Thermal Characteristics
Symbol
Item
R
th(j-c)
Thermal Impedance, max.
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.33
0.10
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
FM
Item
Forward Voltage Drop, max.
Repetitive Peak Reverse Current,
max.
Conditions
T=25℃ I
F
=200A
T
vj
=25℃ V
RD
=V
RRM
T
vj
=125℃ V
RD
=V
RRM
Values
Min.
Typ.
≤0.5
≤6
Max.
1.95
Units
V
mA
mA
I
RRM
Document Number: S-M0046
Rev.1.0, May.31, 2013
www.apt-semi.com
1
MT40CB18T1
◆Thyristor
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Item
o
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
Values
40
1000
850
5000
3600
3000
-40 to +125
-40 to +125
Units
A
A
A
2
s
V
℃
℃
Nm
Nm
A/us
V/us
m/s
2
Average On-State Current
Surge On-State Current
Circuit Fusing Consideration
Isolation Breakdown Voltage(R.M.S)
Operating Junction Temperature
Storage Temperature
Mounting Torque
Critical Rate of Rise of On-State
Current
Critical Rate of Rise of Off-State
Voltage, min.
Maximum allowable acceleration
To terminals(M5)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
=T
VJM
,2/3V
DRM
linear voltage rise
3±15%
5±15%
150
1000
50
Thermal Characteristics
Symbol
Item
Thermal Impedance, max.
R
th(j-c)
Rth(c-s)
Thermal Impedance, max.
Conditions
Junction to Case
Case to Heatsink
Values
0.65
0.20
Units
℃/W
℃/W
Electrical Characteristics
Symbol
V
TM
I
RRM
/I
DRM
Item
Peak On-State Voltage, max.
Repetitive Peak Reverse Current,
max. / Repetitive Peak Off-State
Current, max.
On state threshold voltage
Value of on-state
slope resistance. max
Gate Trigger Voltage, max.
Gate Trigger Current, max.
Non-triggering gate voltage, max.
Non-triggering gate current, max.
Latching current, max.
Holding current, max.
Gate controlled delay time
Circuit commutated turn-off time
Conditions
T=25℃ I
T
=200A
T
VJ
=T
VJM
,V
R
=V
RRM
,V
D
=
V
DRM
For power-loss
calculations only
(T
VJ
=125℃)
T
VJ
=T
VJM
T
VJ
=25℃ , V
D
=6V
T
VJ
=25℃ , V
D
=6V
T
VJ
=125℃,V
D
=2/3V
DRM
T
VJ
=125℃, V
D
=2/3V
DRM
T
VJ
=25℃ , R
G
= 33
Ω
T
VJ
=25℃ , V
D
=6V
TVJ=25℃,
IG=1A, diG/dt=1A/us
T
VJ
=T
VJM
Values
Min. Typ. Max.
1.95
15
Units
V
mA
V
TO
r
T
V
GT
I
GT
V
GD
I
GD
I
L
I
H
tgd
tq
1.0
4.5
2.5
150
0.25
6
300
150
1
80
600
250
V
mΩ
V
mA
V
mA
mA
mA
us
us
Document Number: S-M0046
Rev.1.0, May.31, 2013
www.apt-semi.com
2
MT40CB18T1
Performance Curves
100
W
75
rec.120
rec.60
sin.180
DC
60
A
48
sin.180
DC
36
50
rec.30
rec.120
rec.60
24
rec.30
25
P
TAV
0
0 I
TAV
10
20
30
40
50
A 60
12
I
TAVM
0
0 Tc
50
100
℃
130
Fig1. Power dissipation
1.0
℃/
W
Z
th(j-
S
)
1000
A
Fig2.Forward Current Derating Curve
50HZ
Z
th(j-
C
)
0.5
500
0
0.001 t 0.01
0.1
1
10
S 100
0
10
100
ms 1000
Fig3. Transient thermal impedance
250
A
200
Typ
.
Fig4. Max Non-Repetitive Forward Surge
Current
150
100
25
I
T
0
0 V
TM
0.5
1.0
max
.
25℃
- - -125℃
1.5
2.0
V
2.5
Fig5. Forward Characteristics
Document Number: S-M0046
Rev.1.0, May.31, 2013
www.apt-semi.com
3
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