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MT160C12T2

Description
Thyristor Modules
File Size168KB,5 Pages
ManufacturerAPTSEMI
Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.
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Thyristor Modules

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MT160C18T2
Thyristor Modules
V
RRM
/ V
DRM
800 to 1800V
I
TAV
160A
Applications
Power Converters
Lighting Control
DC Motor Control and Drives
Heat and temperature control
Circuit
Features
International standard package
High Surge Capability
Glass passivated chip
Simple Mounting
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
UL recognized applied for file no. E360040
Module Type
TYPE
MT160C08T2
MT160C12T2
MT160C16T2
MT160C18T2
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
I
TAV
I
TSM
i
2
t
Visol
Tvj
Tstg
Mt
Ms
di/dt
dv/dt
a
Weight
To terminals(M6)
To heatsink(M6)
T
VJ
= T
VJM
, 2/3V
DRM
,I
G
=500mA
Tr<0.5us,tp>6us
T
J
= T
VJM
,2/3V
DRM
, linear voltage rise
Maximum allowable acceleration
Module(Approximately)
Conditions
Sine 180 ;Tc=85℃
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
T
VJ
=45℃ t=10ms, sine
T
VJ
=125℃ t=10ms, sine
a.c.50HZ;r.m.s.;1min
o
Values
160
5400
5000
145000
125000
3000
-40 to 130
-40 to 125
3±15%
5±15%
200
1000
50
165
Units
A
A
A2s
V
Nm
Nm
A/us
V/us
m/s
2
g
Thermal Characteristics
Symbol
Rth(j-c)
Rth(c-s)
Document Number: S-M0039
Rev.1.0, May.31, 2013
Conditions
Cont.;per thyristor / per module
per thyristor / per module
1
Values
0.17/0.085
0.1/0.05
Units
℃/W
℃/W
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