MS120T/R13 datasheet, PDF - EEWORLD Datasheet

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MS120T/R13: DescriptionRectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN; CategoryDiscrete semiconductor diode; File Size118KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MS120T/R13 Overview

Rectifier Diode, Schottky, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA, 2 PIN

MS120T/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	DO-214AC
package instruction	R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
Other features	FREE WHEELING DIODE, LOW POWER LOSS
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	DO-214AC
JESD-30 code	R-PDSO-C2
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	1 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
surface mount	YES
technology	SCHOTTKY
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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MS14~MS120

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE

40 to 200 Volts

CURRENT

1.0 Amperes

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O

• For surface mounted applications

• Low profile package

• Built-in strain relief

• Metal to silicon rectifier. majority carrier conduction

• Low power loss,high efficiency

• High surge capacity

• High current capacity ,low V

• For use in low voltage high frequency inverters, free wheeling,

and polarity protection applications.

•

Lead free in comply with EU RoHS 2002/95/EC directives.

MECHANICAL DATA

•

Case: JEDEC DO-214AC molded plastic

Terminals:Solder plated, solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes positive end (cathode)

Standard packaging: 12mm tape (EIA-481)

Weight: 0.0023 ounce, 0.0679 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive

load.

PA RA M E TE R

M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e

M a xi m um R M S V o l t a g e

M a xi m um D C B l o c k i ng V o l t a g e

M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e F i g ur e 1 )

P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve

s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )

M a xi m um F o r w a r d V o l t a g e a t 1 . 0 A ( N o t e 1 )

M a xi m um D C R e ve r s e C ur r e nt T

= 2 5

a t R a t e d D C B l o c k i ng Vo l t a g e T

= 1 0 0

Ty p i c a l T h e r m a l R e s i s t a n c e ( N o t e 2 )

O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e

S YM B O L

RRM

RMS

D C

F ( A V )

F S M

J L

J A

, T

S T G

.047(1.20)

MS 14

MS 14A

MS 15

MS 16

MS 18

M S 1 9 M S 1 1 0 M S 1 1 5 M S 1 2 0

U N IT S

3 1 .5

1 .0

100

150

105

150

200

140

200

0 .7

0 .7 4

0 .0 5

0 .8 0

0.9

C /

-5 5 to +1 5 0

-6 5 to +1 7 5

NOTES:

1.Pulse Test with PW =300µsec, 1% Duty Cycle.

2.Mounted on P.C. Board with 5.0mm

(.013mm thick) copper pad areas.

STAD-APR.22.2009

PAGE . 1

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