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MMSZ4713

Description
Zener diode
CategoryDiscrete semiconductor   
File Size523KB,2 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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MMSZ4713 Overview

Zener diode

Features

Product Name: Zener Diode


Product model: MMSZ4713


product features:


Pb?Free Packages are Available


Wide Zener Reverse Voltage Range


Small Package Size for High Density Applications


ESD Rating of Class 3 (>16 kV) per Human Body Model




Product parameters:


Pd dissipated power: 350mW


Vz stable voltage: Nom=30V Min=28.5V Max=31.5V


Zzt breakdown impedance:


Zzk breakdown impedance:


IR reverse current: 0.01uA


Vf forward voltage drop: 0.9V



Package: SOD-123


MMSZ4713 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
MMSZ4678-MMSZ4717
ZENER DIODE
Features
Pb−Free Packages are Available
Wide Zener Reverse Voltage Range
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
SOD-123
+
-
Maximum Ratings
(T
a
=25℃ unless otherwise specified
)
Characteristic
Forward voltage
@I
F
=10mA
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage Temperature Range
Symbol
V
F
P
D
R
θJA
T
j,
T
STG
Value
0.9
350
357
-65
~+150
Unit
V
mW
℃/W
Notes: Device mounted on ceramic PCB;5.0mm×7.0mm with pad areas 35 mm
2
ELECTRICAL CHARACTERISTICS (T
a
=25℃unless otherwise noted)
symbol
V
Z
I
ZT
I
R
V
R
I
F
V
F
Parameter
Reverse zener voltage @ I
ZT
Reverse current
Reverse leakage current@ V
R
Reverse voltage
Forward current
Forward voltage @ I
F
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