MMDT4403TB6T/R13 datasheet, PDF

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MMDT4403TB6T/R13: DescriptionSmall Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT4403TB6T/R13 Overview

Small Signal Bipolar Transistor, 0.5A I(C), 40V V(BR)CEO, 2-Element, PNP, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-6

MMDT4403TB6T/R13 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-F6
Contacts	6
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-F6
Number of components	2
Number of terminals	6
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns

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MMDT4403TB6

DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• PNP epitaxial silicon, planar design

• Collector-emitter voltage V

= -40V

• Collector current I

= -500mA

•

Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.052(1.30)

0.043(1.10)

0.067(1.70)

0.059(1.50)

0.011(0.27)

0.006(0.17)

40 Volts

POWER

200 mWatts

SOT-563

Unit

：

inch(mm)

0.044(1.10)

0.035(0.90)

0.067(1.70)

0.059(1.50)

0.024(0.60)

0.019(0.50)

MECHANICAL DATA

• Case: SOT-563, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.003 grams

• Marking: TZ

0.007(0.17)

0.002(0.07)

0.012(0.30)

0.004(0.10)

Fig.53

ABSOLUTE RATINGS

Parameter

Collector - E mitter Voltage

Collector - B ase Voltage

Emitter - B ase Voltage

Collector Current - C ontinuous

Symbol

CEO

CBO

EBO

Value

-40

-5.0

-500

Units

THERMAL CHARACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Thermal Resistance , Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

TOT

R

STG

Value

200

625

-55 to 150

Units

C/W

Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm.

REV.0.1-JUN.29.2009

PAGE . 1

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