MMDT4401_R1_00001 datasheet, PDF

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MMDT4401_R1_00001: DescriptionSmall Signal Bipolar Transistor; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT4401_R1_00001 Overview

Small Signal Bipolar Transistor

MMDT4401_R1_00001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Objectid	1252636885
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	compliant
compound_id	96496617
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G6
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	250 MHz
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns

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MMDT4401

DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• NPN epitaxial silicon, planar design

• Collector-emitter voltage V

=40V

• Collector current I

= 600mA

•

0.054(1.35)

0.045(1.15)

0.087(2.20)

0.074(1.90)

0.010(0.25)

40 Volts

POWER

225 mWatts

MECHANICAL DATA

• Case: SOT-363, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.0002 ounces, 0.006 grams

• Marking: M4A

0.030(0.75)

0.021(0.55)

0.056(1.40)

0.047(1.20)

0.010(0.25)

0.003(0.08)

0.004(0.10)

0.000(0.00)

0.012(0.30)

0.005(0.15)

ABSOLUTE RATINGS (T

=25 C unless otherwise noted)

PARAMETER

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Symbol

CEO

CBO

EBO

Value

6.0

600

Units

THERMAL CHARACTERISTICS (T

=25 C unless otherwise noted)

PARAMETER

Max Power Dissipation (Note1)

Thermal Resistance, Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

TOT

ΘJA

STG

Value

225

625

-55 to 150

Units

C/W

Note 1: Transistor mounted on FR-4 board 1.0X0.85X0.062 in.

October 31,2011-REV.01

PAGE . 1

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