MMDT3904TB6-R2-10001 datasheet, PDF

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MMDT3904TB6-R2-10001: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMDT3904TB6-R2-10001 Overview

Transistor

MMDT3904TB6-R2-10001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
Reach Compliance Code	compliant

MMDT3904TB6-R2-10001 Preview

MMDT3904TB6

DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• NPN epitaxial silicon, planar design

• Collector-emitter voltage VCE = 40V

• Collector current IC = 200mA

• Lead free in comply with EU RoHS 2002/95/EC directives.

• Green molding compound as per IEC61249 Std. . (Halogen Free)

0.052(1.30)

0.043(1.10)

0.067(1.70)

0.059(1.50)

40 Volts

POWER

225 mWatts

SOT-563

0.011(0.27)

0.006(0.17)

0.044(1.10)

0.035(0.90)

0.067(1.70)

0.059(1.50)

0.024(0.60)

0.019(0.50)

MECHANICAL DATA

• Case: SOT-563, Plastic

• Terminals: Solderable per MIL-STD-750, Method 2026

• Approx. Weight: 0.003 gram

• Marking: TX

0.007(0.17)

0.002(0.07)

0.012(0.30)

0.004(0.10)

ABSOLUTE RATINGS

Parameter

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Symbol

CEO

CBO

EBO

Value

6.0

200

Units

THERMAL CHARACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Thermal Resistance , Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

TOT

STG

Value

225

625

-55 to 150

Units

C/W

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

STAD-MAR.13.2008

PAGE . 1

MMDT3904TB6

ELECTRICAL CHARACTERISTICS

P a ra me te r

C o lle c to r - E mi tte r B re a k d o wn Vo lta g e

C o lle c to r - B a s e B re a k d o wn Vo lta g e

E mi tte r - B a s e B re a k d o wn Vo lta g e

B a s e C ut o f f C ur r e nt

C o l l e c t o r C ut o f f C ur r e nt

S ym b o l

(B R)C E O

(B R)C B O

(B R)E B O

Te s t C o n d i t i o n

=1 .0 mA , I

= 1 0 uA , I

= 0

= 1 0 uA , I

= 0

=3 0 V, V

=3 .0 V

=3 0 V, V

=3 .0 V

=0 .1 mA , V

=1 .0 V

=1 .0 mA , V

=1 .0 V

=1 0 mA , V

=1 .0 V

=5 0 mA , V

=1 .0 V

=1 0 0 mA , V

=1 .0 V

M i n.

6 .0

100

0 .6 5

Ty p .

M a x.

300

0 .2

0 .3

0 .8 5

0 .9 5

4 .0

8 .0

200

U ni t s

CEX

D C C ur r e nt G a i n ( N o t e 2 )

C o l l e c t o r - E m i t t e r S a t ur a t i o n Vo l t a g e

(No te 2 )

B a s e - E m i t t e r S a t ur a t i o n Vo l t a g e

(No te 2 )

C o l l e c t o r - B a s e C a p a c i t a nc e

E m i t t e r - B a s e C a p a c i t a nc e

D e l a y Ti m e

R i s e Ti m e

S t o r a g e Ti m e

F a l l Ti m e

C E ( S AT)

B E ( S AT)

CBO

EBO

=1 0 mA , I

=1 .0 mA

=5 0 mA , I

=5 .0 mA

=1 0 mA , I

=1 .0 mA

=5 0 mA , I

=5 .0 mA

=5 V, I

=0 , f=1 MHz

=0 .5 V, I

=0 , f=1 MHz

=3 V,V

=-0 .5 V,

=1 0 mA ,I

=1 .0 mA

=3 V,V

=-0 .5 V,

=1 0 mA ,I

=1 .0 mA

=3 V,I

=1 0 mA

1 =I

2 =1 .0 mA

=3 V,I

=1 0 mA

1 =I

2 =1 .0 mA

Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+3V

275

+10.9V

-0 .5 V

< 1ns

300 ns

D uty C ycle ~ 2.0%

10K

C S * < 4pF

D elay and R ise Tim e Equivalent Test C ircuit

+3V

275

+10.9V

-9.1V

< 1ns

10K

1N916

10 to 500us

Duty Cycle ~ 2.0%

C S * < 4pF

Storage and Fall Tim e Equivalent Test Circuit

STAD-MAR.13.2008

PAGE . 2

MMDT3904TB6

ELECTRICAL CHARACTERISTICS CURVE

300

250

200

=150 C

1.400

=1V

1.200

1.000

=100 C

(V)

0.800

0.600

0.400

=25

=100

150

100

0.01

0.1

=25

0.200

100

1000

0.000

0.01

=150

=1V

0.1

100

1000

Collector Current, I

(mA)

Collector Current, I

(mA)

Fig. 2. Typical VBE vs. Collector Current

Fig. 1. Typical h

vs. Collector Current

1.000

1.0

=25

/ I

=10

(sat)(mV)

=150

(sat) (V)

=100 C

0.100

=25

=150

/ I

=10

0.010

0.01

0.1

100

1000

0.1

0.01

0.1

1.0

100

Collector Current, I

(mA)

Collector Current, I

(mA)

Fig. 3. Typical V

CE (sat)

vs. Collector Current

Fig. 4. Typical V

BE(sat)

vs Collector Current

(EB)

Capacitance (pF)

=150 C

(CB)

0.1

100

Reverse Voltage, V

(V)

Fig. 5. Typical Capacitances vs. Reverse Voltage

STAD-MAR.13.2008

PAGE . 3

MMDT3904TB6

MOUNTING PAD LAYOUT

ORDER INFORMATION

• Packing information

T/R - 4K per 7" plastic Reel

T/R - 10K per 13" plastic Reel

STAD-MAR.13.2008

PAGE . 4

MMDT3904TB6

Part No_packing code_Version

MMDT3904TB6_R1_00001

MMDT3904TB6_R2_00001

For example :

RB500V-40_R2_00001

Part No.

Serial number

Version code means HF

Packing size code means 13"

Packing type means T/R

Packing Code

Packing type

Tape and Ammunition Box

(T/B)

Tape and Reel

(T/R)

Bulk Packing

(B/P)

Tube Packing

(T/P)

Tape and Reel (Right Oriented)

(TRR)

Tape and Reel (Left Oriented)

(TRL)

FORMING

Code

Packing size code

N/A

13"

26mm

52mm

PANASERT T/B CATHODE UP

(PBCU)

PANASERT T/B CATHODE DOWN

(PBCD)

Version Code

XXXXX

Code

HF or RoHS

Code 2

Code

RoHS

serial number

STAD-MAR.13.2008

PAGE .

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