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MMBV3700T-3K

Description
200 V, SILICON, PIN DIODE
Categorysemiconductor    Discrete semiconductor   
File Size88KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBV3700T-3K Overview

200 V, SILICON, PIN DIODE

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MMBV3700
SURFACE MOUNT PIN DIODE
VOLTAGE
FEATURES
• Very low series resistance at 100MHz (0.7Ω typical@ I
F
=10mA)
• Long minority carrier lifetime (Trr=300ns typical)
• Low capacitance (0.5 pF typical @V
R
=20V)
• Surface mount package ideally suited for autmatic insertion
• Pb free product are available : 99% Sn above can meet
RoHS environment substance directive request
.083(2.10)
.066(1.70)
.006(.15)
.002(.05)
200 Volts
POWER
200 mW
SOT- 23
Unit: inch (mm)
.047(1.20)
.056(1.40)
.007(.20)MIN
• High reverse breakdown voltage (200V min)
.119(3.00)
.110(2.80)
.103(2.60)
.044(1.10)
.006(.15)MAX
.020(.50)
.013(.35)
MECHANICAL DATA
Case: SOT-23, Plastic
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.008 gram
ABSOLUTE RATINGS
PARAMETER
Maximum Reverse Voltage
Continuous Forward Current
SYMBOL
VALUE
200
0.2
.035(0.90)
.086(2.20)
UNIT
V
A
V
R
I
F
THERMAL CHARACTERISTICS
PARAMETER
Power Dissipation (1)
Thermal Resistance, Junction to Ambient (1)
Junction Temperature
Storage Temperature
SYMBOL
VALUE
200
625
-55 to 150
-55 to 150
UNIT
mW
O
P
TOT
R
Θ
JA
T
J
T
STG
C/W
O
C
C
O
Note 1. FR-5 Board=1.0x0.75x0.062 in.
SINGLE
REV.0-FEB.8.2006
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