MMBTH10-T/R13 datasheet, PDF - EEWORLD Datasheet

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MMBTH10-T/R13: DescriptionUHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size123KB，3 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBTH10-T/R13 Overview

UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR

超高频波段, 硅, NPN, 射频小信号晶体管

MMBTH10-T/R13 Parametric

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	NPN
Maximum collector current	0.0500 A
Maximum Collector-Emitter Voltage	25 V
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	RECTANGULAR
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
terminal coating	MATTE TIN
Terminal location	DUAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Number of components	1
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Transistor type	RF SMALL SIGNAL
highest frequency band	ULTRA HIGH FREQUENCY BAND
Rated crossover frequency	650 MHz
Maximum Collector Base Capacitance	0.7000 pF

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MMBTH10

NPN HIGH FREQUENCY TRANSISTOR

This device is designed for VHF/UHF amplifier applications and high output

VHF oscillators.

COLLECTOR

BASE

SPECIFICATION FEATURES

Guaranteed Minimum Current Gain-Bandwidth Product of 650 MHz

Collector Currents up to 50mA

Industry Standard SOT-23 Package

EMITTER

APPLICATIONS

Low Noise VHF/UHF Amplifiers and Mixers

Low Frequency Drift, High Output Oscillators

SOT-23

MAXIMUM RATINGS

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

= 25°C

Symbol

CE0

CB0

EB0

stg

Value

3.0

225

-55 to 150

Units

°C

Collector Current - Continuous (Note 1)

Power Dissipation (Note 1)

Operating Temperature Range

Storage Temperature Range

THERMAL CHARACTERISTICS

CHARACTERISTIC

Thermal Resistance - Junction to Ambient (Note 1)

Symbol

th JA

Value

556

Units

°C/W

Note 1: Device mounted on FR-5 board 1.0 x 0.75 x 0.062 in. with recommended minimum pad layout

4/18/2006

Page

www.panjit.com

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