DONGGUAN NANJING
ELECTRONICS LTD.,
SOT-23 Plastic-Encapsulate Transistors
MMBTA94
FEATURES
High Breakdown Voltage
MARKING:4D
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
C
R
ΘJA
T
j
T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
-Continuous
Collector Current
-Pulsed
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-400
-400
-5
-200
-300
350
357
150
-55½+150
Unit
V
V
V
mA
mA
mW
℃/W
℃
℃
1. BASE
2. EMITTER
3. COLLECTOR
TRANSISTOR (PNP)
SOT–23
ELECTRICAL CHARACTERISTICS (T
a
=25℃ unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE(1)
DC current gain
h
FE(2)
h
FE(3)
h
FE(4)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
V
CE(sat)1
V
CE(sat)2
V
BE(sat)
f
T
Test conditions
I
C
=-100µA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-100µA, I
C
=0
V
CB
=-400V, I
E
=0
V
CE
=-400V, I
B
=0
V
EB
=-4V, I
C
=0
V
CE
=-10V, I
C
=-10mA
V
CE
=-10V, I
C
=-1mA
V
CE
=-10V, I
C
=-100mA
V
CE
=-10V, I
C
=-50mA
I
C
=-10mA, I
B
=-1mA
I
C
=-50mA, I
B
=-5mA
I
C
=-10mA, I
B
=-1mA
V
CE
=-20V,I
C
=-10mA,
f=30MHz
50
80
70
40
40
-0.2
-0.3
-0.75
V
V
V
MHz
Min
-400
-400
-5
-0.1
-5
-0.1
300
Typ
Max
Unit
V
V
V
µA
µA
µA
C,Sep,2012
Typical Characteristics
-20
MMBTA94
h
FE
—— I
C
V
CE
= -10V
T
a
=100 C
o
Static Characteristic
COMMON
EMITTER
T
a
=25
℃
h
FE
-70uA
DC CURRENT GAIN
-60uA
-50uA
-40uA
-1000
(mA)
-100uA
-15
-90uA
-80uA
COLLECTOR CURRENT
I
C
-10
-100
T
a
=25 C
o
-5
-30uA
-20uA
-0
-0
-2
-4
-6
-8
-10
-12
-14
I
B
=-10uA
-16
-18
-20
-10
-1
COLLECTOR-EMITTER VOLTAGE
V
CE
(V)
COLLECTOR CURRENT
-10
I
C
(mA)
-100
-200
-1000
V
BEsat
—— I
C
COLLECTOR-EMITTER SATURATION
VOLTAGE V
CEsat
(V)
β=10
-10
V
CEsat
——
β=10
I
C
BASE-EMITTER SATURATION
VOLTAGE V
BEsat
(mV)
-800
T
a
=25
℃
-600
-1
T
a
=100
℃
-0.1
-400
T
a
=25
℃
-0.01
T
a
=100
℃
-200
-0
-0.1
-1E-3
-1
-10
-100
-200
-1
-10
-100
-200
COLLECTOR CURRENT
I
C
(mA)
COLLECTOR CURRENT
I
C
(mA)
60
f
T
——
I
C
V
CE
=-20V
T
a
=25 C
(pF)
o
1000
C
ob
/ C
ib
——
V
CB
/
V
EB
f=1MHz
I
E
=0 / I
C
=0
T
a
=25 C
o
(MHz)
f
T
55
50
TRANSITION FREQUENCY
45
CAPACITANCE
C
100
C
ib
40
35
10
C
ob
30
25
20
-0
-10
-20
-30
-40
-50
-60
1
-0.1
-1
-10
-20
COLLECTOR CURRENT
I
C
(mA)
REVERSE VOLTAGE
V
(V)
400
P
c
——
T
a
COLLECTOR POWER DISSIPATION
P
c
(mW)
350
300
250
200
150
100
50
0
0
25
50
75
100
125
150
C,Sep,2012
AMBIENT TEMPERATURE
T
a
(
℃
)
View All
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