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MMBTA56-R1-10001

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBTA56-R1-10001 Overview

Transistor

MMBTA56-R1-10001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codecompliant

MMBTA56-R1-10001 Preview

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MMBTA05,MMBTA06,MMBTA55,MMBTA56
NPN AND PNP HIGH VOLTAGE TRANSISTOR
VOLTAGE
60~80 Volts
FEATURES
• NPN and PNP silicon, planar design
• Collector current I
C
= 500mA
• Lead free in comply with EU RoHS 2002/95/EC directives.
• Green molding compound as per IEC61249 Std. . (Halogen Free)
0.056(1.40)
0.047(1.20)
0.120(3.04)
0.110(2.80)
POWER
225 mWatts
SOT-23
Unit
inch(mm)
MECHANICAL DATA
• Case: SOT-23, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Approx. Weight: 0.0003 ounces, 0.0084 grams
• Marking :
M M B TA 0 5 = B 0 5
M M B TA 0 6 = B 0 6
M M B TA 5 5 = B 5 5
M M B TA 5 6 = B 5 6
0.079(2.00)
0.070(1.80)
0.008(0.20)
0.003(0.08)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.013(0.35)
0.044(1.10)
0.035(0.90)
MAXIMUM RATINGS
PA RA M E TE R
C o lle c to r-E mi tte r Vo lta g e
C o lle c to r-B a s e Vo lta g e
E mi tte r-B a s e Vo lta g e
C o l l e c t o r C ur r e nt - C o nt i nuo us
C i r c ui t F i g ur e
S YM B O L
V
CEO
V
CBO
V
EBO
I
C
NP N
P NP
M M B TA 0 5 M M B TA 5 5 M M B TA 0 6 M M B TA 5 6 U N I T S
60
60
4 .0
500
NP N
P NP
80
80
V
V
V
mA
THERMAL CHARACTERISTICS
CHARACTERISTIC
Total Device Dissipation FR-5 Board (Note 1)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Total Device Dissipation Alumina Substrate (Note 2)T
A
=25
O
C
Derate above 25
O
C
Thermal Resistance , Junction to Ambient
Junction and Storage Temperature
SYMBOL
P
D
JA
P
D
JA
T
J
,T
STG
MAX
225
1.8
556
300
2.4
417
-55 to 150
PNP
UNIT
mW
mW/
O
C
O
C/W
mW
mW/
O
C
O
C
C
NPN
O
1.FR-4=70 x
60
x
1mm.
2.Alumina=0.4 x 0.3 x 0.024 in. 99.5 alumina
STAD-NOV.30.2005
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