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MMBTA13

Description
TRANSISTOR (NPN) transistor
CategoryDiscrete semiconductor   
File Size387KB,4 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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MMBTA13 Overview

TRANSISTOR (NPN) transistor

Features

Product Name: TRANSISTOR (NPN) transistor


Product model: MMBTA13


Product Description:


Darlington Connection for a High hFE


High Input Impedance



parameter:


Polarity: NPN


PCM (collector maximum power consumption): 300mW


Ic (collector current): 300mA


BVcbo (collector-base breakdown voltage): 30V


BVceo (set-to-shoot breakdown voltage): 30V


BVebo (emitter-base breakdown voltage): 10V


hFE (DC current gain): 10000


VCE(sat) (collector-emitter saturation voltage): 1.5V


fT (transition frequency): 125MHz


Package: SOT-23

MMBTA13 Parametric

Parameter NameAttribute value
Number of terminals3
Transistor polarityNPN
Maximum collector current0.3000 A
Maximum Collector-Emitter Voltage30 V
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuredarlington
Number of components1
Transistor component materialssilicon
Maximum ambient power consumption0.3500 W
Transistor typeUniversal small signal
Minimum DC amplification factor10000
Rated crossover frequency125 MHz
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