MMBTA06 datasheet, PDF - EEWORLD Datasheet

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MMBTA06: DescriptionRated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN; CategoryDiscrete semiconductor triode; File Size1MB，6 Pages; ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.; Websitehttp://www.fsbrec.com/; Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of 45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.

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MMBTA06 Overview

Rated power: 300mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN

MMBTA06 Parametric

Parameter Name	Attribute value
rated power	300mW
Collector current Ic	500mA
Collector-emitter breakdown voltage Vce	80V
Transistor type	NPN

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MMBTA06

Rev.FApr.-2017

DATA SHEET

描述

Descriptions

SOT-23 塑封封装 NPN 半导½三极管。Silicon

NPN transistor in a SOT-23 Plastic Package.

特征

/ Features

与 MMBTA56 互补。

Complementary to MMBTA56.

用途

Applications

用于中功率放大和开关。

Ideal for medium power amplification and switching.

内部等效电路

/ Equivalent Circuit

引脚排列

/ Pinning

PIN1：Base

印章代码

PIN 2： Emitter

PIN 3：Collector

/ Marking

100½300

HK1G

Range

Marking

http://www.fsbrec.com

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