MMBT4403T/R13 datasheet, PDF - EEWORLD Datasheet

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MMBT4403T/R13: Description600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236; CategoryDiscrete semiconductor The transistor; File Size234KB，4 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT4403T/R13 Overview

600 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236

600 mA, 40 V, PNP, 硅, 小信号晶体管, TO-236

MMBT4403T/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	255 ns
Maximum opening time (tons)	35 ns

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MMBT4403

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

PNP epitaxial silicon, planar design

Collector-emitter voltage V

= -40V

Collector current I

=-600mA

Complimentary (NPN) device: MMBT4401

40V

POWER

225mW

MECHANICAL DATA

Case: SOT-23

Terminals: Solderable per MIL-STD-202, Method 208

Approx Weight: 0.02 grams

Marking: M3A

Top View

Collector

BASE

COLLECTOR

Base

Emitter

EMITTER

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

VALUE

UNIT

Collector - Emitter Voltage

Collector - Base Voltage

Emitter – Base Voltage

Collector Current - Continuous

Max Power Dissipation (Note 1)

Junction and Storage Temperature Range

CE0

CB0

EB0

TOT

, T

STG

-40

-5.0

-600

225

-55 to 150

℃

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

VALUE

UNIT

Thermal Resistance , Junction to Ambient (Note 1)

θJ A

556

℃/W

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in. using minimum recommended pad.

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