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MMBT4401F2

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,
CategoryDiscrete semiconductor    The transistor   
File Size339KB,5 Pages
ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.
Websitehttp://www.21yangjie.com/
Environmental Compliance
Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.
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MMBT4401F2 Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon,

MMBT4401F2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerYangzhou Yangjie Electronic Technology Co., Ltd.
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
Maximum off time (toff)255 ns
Maximum opening time (tons)35 ns
Base Number Matches1

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MMBT4401
 
RoHS
 
COMPLIANT
NPN General Purpose Amplifier
Features
● Epoxy meets UL-94 V-0 flammability rating
● Moisture Sensitivity Level 1
● Marking: 2X
Maximum Ratings
(Ta=25℃ unless otherwise noted)
Item
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Device Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
TSTG
Unit
V
V
V
mA
mW
Conditions
Value
60
40
6
600
300
150
-55 to +150
Electrical Characteristics
(Ta=25℃ unless otherwise noted)
Item
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Delay time
Rise time
Storage time
Fall time
Symbol
V
(BR)CBO
V
(BR)CEO*
V
(BR)EBO
I
CEO
I
CBO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
td
tr
ts
tf
Unit
V
V
V
nA
nA
nA
V
V
V
MHz
ns
ns
ns
ns
Conditions
IC=10mA,IE=0
IC =1mA,IB=0
IE=100μA,IC=0
VCB=35V,IB=0
VCE=60V, IC =0
VEB=3 V, IC =0
VCE=1V,IC=150mA
IC=150mA,IB=15mA
IC=150mA,IB=15mA
VCE=10V,IC=20mA,f=100MHz
VCC=30V, VBE(off)=0.2V
IC=150mA,IB1=15mA
VCC=30V,IC=150mA,IB1=IB2=15mA
250
15
20
225
30
100
Min
60
40
6
100
100
100
300
0.4
0.95
Typ
Max
1/5
S-S265
Rev. 2.2, 24-Jan-19
Yangzhou Yangjie Electronic Technology Co., Ltd.
www.21yangjie.com
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