MMBT3906 datasheet, PDF - EEWORLD Datasheet

MMBT3906: Description200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR; Categorysemiconductor Discrete semiconductor; File Size56KB，3 Pages; ManufacturerNanjing International Group Co.,Ltd

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200 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR

200 mA, 40 V, PNP, 硅, 小信号晶体管

Parameter Name	Attribute value
Number of terminals	3
Transistor polarity	PNP
Maximum on-time	70 ns
Maximum off time	300 ns
Maximum collector current	0.2000 A
Maximum Collector-Emitter Voltage	40 V
Processing package description	GREEN, PLASTIC PACKAGE-3
state	DISCONTINUED
packaging shape	Rectangle
Package Size	SMALL OUTLINE
surface mount	Yes
Terminal form	GULL WING
Terminal location	pair
Packaging Materials	Plastic/Epoxy
structure	single
Number of components	1
transistor applications	switch
Transistor component materials	silicon
Maximum ambient power consumption	0.2000 W
Transistor type	Universal small signal
Minimum DC amplification factor	30
Rated crossover frequency	300 MHz

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