MMBT2907AW datasheet, PDF - EEWORLD Datasheet

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MMBT2907AW: DescriptionPNP GENERAL PURPOSE SWITCHING TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size151KB，5 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT2907AW Overview

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

MMBT2907AW Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Maximum collector current (IC)	0.6 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Maximum off time (toff)	100 ns
Maximum opening time (tons)	45 ns

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Part Number: MMBT2907AW

MMBT2907AW

PNP GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

.004(.10)MIN.

60 Volts

POWER

225 mW

SOT-323

Unit: inch (mm)

PNP epitaxial silicon, planar design

Collector-emitter voltage VCE = -60V

Collector current IC = -600mA

In compliance with EU RoHS 2002/95/EC directives and with Halogen

Free

.056(1.40)

.047(1.20)

.087(2.2)

.070(1.8)

.054(1.35)

.045(1.15)

.006(.15)

.002(.05)

.004(.10)MAX.

Case: SOT-323

Terminals : Solderable per MIL-STD-750,Method 2026

Approx Weight: 0.0048 gram

Device Marking : M7A

.016(.40)

.008(.20)

ABSOLUTE MAXIMUM RATINGS

Parameter

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current-Continuous

Symbol

Value

-60

-5.0

-600

.044(1.1)

.035(0.9)

MECHANICAL DATA

Units

C E O

C B O

E B O

THERMAL CHATACTERISTICS

Parameter

Max Power Dissipation (Note 1)

Storage Temperature

Junction Temperaure

Thermal Resistance, Junction to Ambient

Symbol

Value

225

-55 to 150

556

Units

T O T

S T G

J A

C/W

Note 1 : Transistor mouted on FR-5 board 1.0 x 0.75 x 0.062 in.

.087(2.2)

.078(2.0)

STAD-JUL.13.2006

PAGE . 1

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