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MMBT2222AW_R2_10001

Description
Small Signal Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT2222AW_R2_10001 Overview

Small Signal Bipolar Transistor

MMBT2222AW_R2_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instruction,
Reach Compliance Codecompliant
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
Number of components1
Polarity/channel typeNPN
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz

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Download Datasheet
MMBT2222AW
NPN GENERAL PURPOSE SWITCHING TRANSISTOR
VOLTAGE
FEATURES
• NPN epitaxial silicon, planar design
• Collector-emitter voltage VCE = 40V
• Collector current IC = 600mA
0.087(2.20)
0.070(1.80)
40 Volts
POWER
150 mWatts
SOT-323
Unit
inch(mm)
0.004(0.10)MIN.
0.044(1.10)
0.035(0.90)
0.054(1.35)
0.045(1.15)
MECHANICAL DATA
• Case: SOT-323, Plastic
• Terminals: Solderable per MIL-STD-750, Method 2026
• Apporx. Weight: 0.0001 ounce, 0.005 gram
• Marking: M2A
0.056(1.40)
0.047(1.20)
0.006(0.15)
0.002(0.05)
0.004(0.10)MAX.
0.016(0.40)
0.008(0.20)
ABSOLUTE RATINGS
PARAMETER
Collector - Emitter Voltage
Collector - Base Voltage
Emitter - Base Voltage
Collector Current - Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
40
75
6.0
600
Units
V
V
V
mA
THERMAL CHARACTERISTICS
PARAMETER
Max Power Dissipation (Note 1)
Thermal Resistance , Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
P
TOT
R
θJA
T
J
T
STG
Value
150
830
-55 to 150
-55 to 150
Units
mW
O
0.087(2.20)
0.078(2.00)
C/W
O
C
C
O
Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.
May 13.2010-REV.00
PAGE . 1
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