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MJE13003F1

Description
Rated power: 1W Collector current Ic: 800mA Collector-emitter breakdown voltage Vce: 400V Transistor type: NPN
CategoryDiscrete semiconductor    triode   
File Size766KB,6 Pages
ManufacturerFoshan Blue Rocket Electronics Co.,Ltd.
Websitehttp://www.fsbrec.com/
Foshan Blue Arrow Electronics Co., Ltd. is a high-tech enterprise in Guangdong Province and a professional R&D manufacturer of semiconductor devices in China. The company was formerly Foshan Radio Factory No. 4, which was founded in the early 1970s. It was transformed into a limited liability company in 1998 and changed its shares to Foshan Blue Arrow Electronics Co., Ltd. in 2012. At present, it has formed an annual production scale of 10 billion units and is one of the main semiconductor device production bases in South China. The company's factory is located in Chancheng District, Foshan City, with a plant area of ​​45,000 square meters. The company has a large number of advanced production lines, and its product series include various packaged bipolar transistors, field effect transistors (MOSFET), various switches, voltage regulators, Schottky (SBD), fast recovery (FRD) and other diodes, thyristors (silicon controlled rectifiers), integrated circuits (ICs), LEDs and LED lighting fixtures, etc. The products are widely used in household appliances, power supplies, IT digital, communications, new energy, automotive electronics, instrumentation, display screens, lighting, backlight sources and other fields. The company has passed ISO9001 quality management system certification since 1997, ISO14001 environmental management system certification in 2005, ISO/TS16949 (IATF16949) automotive industry quality management system standard certification in 2013, and OHSAS18001 certification in 2015. At present, the company has established the Guangdong Semiconductor Device Engineering Technology Research and Development Center and the Guangdong Enterprise Technology Center. In 2008, the "Blue Arrow" brand transistor was recognized as a famous brand product in Guangdong Province.
Download Datasheet Parametric View All

MJE13003F1 Overview

Rated power: 1W Collector current Ic: 800mA Collector-emitter breakdown voltage Vce: 400V Transistor type: NPN

MJE13003F1 Parametric

Parameter NameAttribute value
rated power1W
Collector current Ic800mA
Collector-emitter breakdown voltage Vce400V
Transistor typeNPN

MJE13003F1 Preview

Download Datasheet
MJE13003F1
Rev.E Mar.-2016
DATA SHEET
描述

特征
/
Descriptions
TO-92 塑封封装 NPN 半导½三极管。Silicon
NPN transistor in a TO-92 Plastic Package.
/ Features
耐压高,快速½换。
High Voltage Capability High Speed Switching.
用途
/
Applications
主要用于节½灯、日光灯电子镇流器及其它开关、振荡电路。
High frequency electronic lighting ballast applications,converters, inverters, switching regulators, etc.
内部等效电路
/ Equivalent Circuit
引脚排列
/ Pinning
12
3
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
见印章说明。See
Marking Instructions.
http://www.fsbrec.com
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