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MD350C08D4

Description
Rectifier Diode Modules
File Size112KB,3 Pages
ManufacturerAPTSEMI
Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.
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Rectifier Diode Modules

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MD350C18D4
Applications
Rectifier
Non-controllable rectifiers for AC/AC
converters
V
RRM
800 to 1800V
Line rectifiers for transistorized AC motor
I
FAV
350 A
controllers
Field supply for DC motors
Diode Modules
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
Features
Blocking voltage: 800 to 1800V
Heat transfer through aluminum oxide ceramic
isolated metal baseplate
Module Type
TYPE
MD350C08D4
MD350C12D4
MD350C16D4
MD350C18D4
MD350A08D4
MD350A12D4
MD350A16D4
MD350A18D4
MD350K08D4
MD350K12D4
MD350K16D4
MD350K18D4
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Single phase ,half wave 180°conduction Tc=85℃
I
FAV
t=10mS Tvj =45℃
I
FSM
2
t=10mS Tvj =45℃
it
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
Weight
To terminals(M10)
To heatsink(M6)
Values
350
13000
845000
3000
-40 to 150
-40 to 125
9±15%
5±15%
1509
Units
A
A
A
2
s
V
Nm
Nm
g
Module (Approximately)
Thermal Characteristics
Symbol
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
V
FM
I
RD
Conditions
Values
0.05
0.02
Units
℃/W
℃/W
Conditions
T=25℃ I
F
=1200A
T
vj
=TvjM V
RD
=V
RRM
Values
Min.
Typ.
Max.
1.8
20
Units
V
mA
Document Number: S-M0011
Rev.1.0, May.31, 2013
www.apt-semi.com
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