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MD120K08D1

Description
Glass Passivated Rectifier Diode Modules
File Size85KB,3 Pages
ManufacturerAPTSEMI
Jiangsu APT Semiconductor Co., Ltd. is a high-tech enterprise invested and controlled by Yangzhou Yangjie Electronic Technology Co., Ltd., which specializes in the design, manufacture and sale of new power electronic modules and semiconductor intelligent devices with independent intellectual property rights. Products include: IGBT, MOSFET, FRED, thyristor, rectifier and other power modules and their semiconductor devices. It has an annual production capacity of 3 million power modules of various types and is currently one of the domestic power electronic power module production bases. The company's products can be widely used in different fields with a power range of 0.5KW~1MW, including inverters, welding machines, induction heating, uninterruptible power supplies, variable frequency air conditioners, electric vehicles, locomotive traction, solar energy, wind power generation, charging devices, smart grids, household appliances, medical equipment, etc.
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Glass Passivated Rectifier Diode Modules

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MD120C18D1
Glass Passivated Rectifier
Diode Modules
V
RRM
800 to 1800V
I
FAV
120 Amp
Applications
Non-controllable rectifiers for AC/AC
converters
Line rectifiers for transistorized AC motor
controllers
Field supply for DC motors
Circuit
Features
Blocking voltage:800 to 1800V
Heat transfer through aluminum oxide DBC
ceramic isolated metal baseplate
Glass passivated chip
UL recognized applied for file no. E360040
Module Type
TYPE
MD120C08D1
MD120C12D1
MD120C16D1
MD120C18D1
MD120A08D1
MD120A12D1
MD120A16D1
MD120A18D1
MD120K08D1
MD120K12D1
MD120K16D1
MD120K18D1
V
RRM
800V
1200V
1600V
1800V
V
RSM
900V
1300V
1700V
1900V
Maximum Ratings
Symbol
Conditions
Single phase ,half wave 180°conduction Tc=106℃
I
FAV
t=10mS Tvj =45℃
I
FSM
2
t=10mS Tvj =45℃
it
a.c.50HZ;r.m.s.;1min
V
isol
T
vj
T
stg
Mt
Ms
Weight
To terminals(M5)
To heatsink(M6)
Values
120
2800
39200
3000
-40 to +150
-40 to +125
3±15%
5±15%
100
Units
A
A
A
2
s
V
Nm
Nm
g
Module (Approximately)
Thermal Characteristics
Symbol
Per diode
R
th(j-c)
Module
R
th(c-s)
Electrical Characteristics
Symbol
V
FM
I
RD
T=25℃ I
F
=300A
Conditions
Values
0.26
0.1
Units
℃/W
℃/W
Conditions
T
vj
=150℃ V
RD
=V
RRM
Values
Min.
Typ.
1.20
Max.
1.35
6
Units
V
mA
Document Number: S-M0005
Rev.1.0, May.31, 2013
www.apt-semi.com
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