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MBRF20200CT

Description
DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 20A Forward voltage drop (Vf): 950mV @ 10A 200V, 20A, VF=950mV@10A
CategoryDiscrete semiconductor    Schottky diode   
File Size659KB,2 Pages
ManufacturerMicrodiode Semiconductor (Shenzhen) Co., Ltd.
Websitehttp://www.microdiode.com/
Shenzhen Chenda Semiconductor Co., Ltd. (MDD for short) is a national high-tech enterprise focusing on the R&D, design, packaging, testing and sales of semiconductor discrete devices. The company has been deeply involved in the semiconductor field for 16 years, always insisting on product technology as the driving force and customer needs as the core, creating a full range of high-reliability and high-performance product service matrix covering MOSFET, diodes, triodes, rectifier bridges, SiC, etc. The products are widely used in new energy vehicles, industrial control, consumer electronics, communications, home appliances, medical, lighting, security, instrumentation and other fields, serving more than 40 countries and regions around the world. The company adheres to the development concept of keeping pace with the times, based on the current advanced power device design and packaging and testing capabilities, continues to pay attention to the development trends of cutting-edge technologies and application fields, comprehensively promotes product upgrades and iterations, improves the industrialization of power devices and the ability of service closed loop, and provides customers with sustainable, all-round and differentiated one-stop product solutions. Looking to the future, the company will rely on its ability to insight the industry, through the dual-wheel drive of brand and technology, to quickly realize the development vision of "building an international leading brand of semiconductor discrete devices" and help upgrade China's semiconductor industry.
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MBRF20200CT Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 20A Forward voltage drop (Vf): 950mV @ 10A 200V, 20A, VF=950mV@10A

MBRF20200CT Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)200V
Average rectified current (Io)20A
Forward voltage drop (Vf)950mV @ 10A

MBRF20200CT Preview

Download Datasheet
MBRF201500CT THRU MBRF20200CT
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 150 to 200 Volts
ITO-220AB
4.5± 0.2
10.2± 0.2
3.1
+0.2
-0.1
Forward Current - 20.0 Amperes
FEATURES
High surge capacity.
For use in low voltage, high frequency inverters,free
wheeling,and polarity protection applications.
Metal silicon junction,majority carrier conduction.
High current capability,low forward voltage drop.
Guard ring for over voltage protection.
φ
3 .3± 0.1
15.0± 0.5
16.5± 0.3
1
13.5± 0.5
PIN
2 3
4.0± 0.3
1.4± 0.1
0.6± 0.1
8.2± 0.2
φ
3 .2± 0.2
2.6± 0.2
MECHANICAL DATA
Case:
ITO-220AB molded plastic body
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:0.060
ounce, 1.67 grams
2.6± 0.15
PIN 1
PIN 3
PIN 2
CASE
0.6± 0.1
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
(see fig.1)
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 10.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum thermal resistance(NOTE 1)
Operating junction temperature range
Storage temperature range
Note:
1.Thermal resistance from junction to case
SYMBOLS
MBRF20150CT
150
135
150
20.0
MBRF20200CT
200
140
200
UNITS
VOLTS
VOLTS
VOLTS
Amps
V
RRM
V
RMS
V
DC
I
(AV)
I
FSM
V
F
I
R
R
θ
JC
T
J
T
STG
150.0
0.95
0.2
50.0
1.5
-55 to +150
-55 to +150
Amps
Volts
mA
C/W
C
C
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