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MBR6200FCT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size75KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

MBR6200FCT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR6200FCT


parameter:


Repetitive reverse voltage peak Vrrm: 200V


Maximum average rectified current Io: 6A


Maximum forward surge current I FSM: 75A


Forward voltage drop VF: 0.9V when IF=3A


Maximum feedback current IR: 50uA when VR=200V


Package: ITO-220AB


MBR6200FCT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current75 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current6 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage200 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR6200FCT Preview

Download Datasheet
MBR640FCT~MBR6200FCT
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O utilizing
Flame Retardant Epoxy Molding Compound.
• Exceeds environmental standards of MIL-S-19500/228
• Low power loss, high efficiency.
• Low forwrd voltge, high current capability
• High surge capacity.
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
40 to 200 Volts
CURRENT
6.0 Ampers
MECHANICALDATA
• Case: ITO-220AB full molded plastic package
• Terminals: Lead solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
.027(.67)
.022(.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA M E TE R
M a xi m um R e c ur r e nt P e a k R e ve r s e V o l t a g e
M a xi m um R M S V o l t a g e
M a xi m um D C B l o c k i ng V o l t a g e
M a xi m um A ve r a g e F o r w a r d C ur r e nt ( S e e F i g ur e 1 )
P e a k F o r w a r d S ur g e C ur r e nt : 8 . 3 m s s i ng l e ha l f s i ne - w a ve
s up e r i m p o s e d o n r a t e d l o a d ( J E D E C m e t ho d )
M a xi m um F o r w a r d V o l t a g e a t 3 . 0 A p e r l e g
M a xi m um D C R e ve r s e C ur r e nt T
J
= 2 5
O
C
a t R a t e d D C B l o c k i ng Vo l t a g e T
J
= 1 0 0
O
C
Ty p i c a l T h e r m a l R e s i s t a n c e
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e R a n g e
S YM B O L
V
RRM
V
RMS
V
DC
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J C
T
J
, T
S TG
MB R6 4 0 F C T MB R6 4 5 F C T MB R6 5 0 F C T MB R6 6 0 F C T MB R6 8 0 F C T MB R6 9 0 F C T MB R6 1 0 0 F C T MB R6 1 5 0 F C T MB R6 2 0 0 F C T
U N IT S
V
V
V
A
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
6 .0
75
90
63
90
100
70
100
150
105
150
200
140
200
0 .7 0
0 .7 5
0 .0 5
20
3
0 .8 0
0 .9 0
V
mA
O
C /W
O
-5 5 to +1 5 0
-6 5 to +1 7 5
C
NOTES : Both Bonding and Chip structure are available.
STAD-APR.30.2009
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