MBR5200_R2_10001 datasheet, PDF

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MBR5200_R2_10001: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR5200_R2_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 5A, 200V V(RRM), Silicon, DO-201AD,

MBR5200_R2_10001 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	150 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	5 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	2.5 W
Maximum repetitive peak reverse voltage	200 V
Maximum reverse current	50 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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MBR540 SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Epitaxial Construction

• Guard Ring Die Construction for Transient Protection

• Low Power Loss, High Efficiency

• High Surge Capability

• High Current Capability and Low Forward Voltage Drop

• Surge Overload Rating to 150A Peak

and Polarity Protection Applications

• Lead free in compliance with EU RoHS 2011/65/EU directive

0.375(9.5)

0.285(7.2)

1.0(25.4)MIN.

0.052(1.3)

0.048(1.2)

40 to 200 Volt

CURRENT

5 Ampere

• For Use in Low Voltage, High Frequency Inverters, Free Wheeling,

MECHANICAL DATA

• Case: DO-201AD Molded plastic

• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026

• Polarity: Color band denotes cathode

• Weight: 0.0402 ounces, 1.142 grams

1.0(25.4)MIN.

0.210(5.3)

0.188(4.8)

Cathode

Anode

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

PARA M ET ER

M a ximum Re cur r e nt Peak Re ve r s e Vo lt age

M a ximum RM S Vo lt age

M a ximum DC Bloc king Vo lt age

Ave r a g e Re c t i f ie d O ut p ut Cur r e nt ( Se e F ig ur e 1 )

No n- Re p e t it ive P e a k Fo r w a r d Sur g e Cur r e nt : 8 . 3 ms s ing le

ha lf sine - w ave super impos ed on r a t e d load

Po w e r Diss ipat io n

F o r w a r d Vo lt a g e a t 5 A ( No t e s 3 )

= 2 5

M a ximum DC Re ve r se Cur r e nt a t Ra t e d DC

Blo c k ing Vo lt a g e ( No t e s 4 )

= 1 0 0

= 1 2 5

Typical Ther ma l Re s is t ance ( Not es 2)

( Not es 1)

Typical Junc t ion Capa cit a nc e ( V

= 4 V, f = 1 M Hz)

O per at ing Junc t ion a nd St o r a g e Te mp e r a t ur e Ra ng e

NOTES :

SY M BO L

RRM

RM S

F( AV)

FSM

M BR54 0

M BR54 5 M BR55 0 M BR560 M BR580 M BR590 M BR5 100 M BR5 150 M BR5200

UNI T S

31. 5

150

2.5

100

150

105

150

200

140

200

0. 7

0. 74

0.05

0.8

0.9

C / W

θJA

θJ

θJC

, T

STG

- 55 t o + 1 50

250

-65 to +150

150

1. Measured at ambient temperature at a distance of 9.5mm from the case

2. Minimum Pad Area

3. Pulse test : 300μs pulse width, 1% duty cycle

4.Short duration pulse test used to minimize self-heating effect.

September 30,2016-REV.04

PAGE . 1

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