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MBR4090PT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size52KB,2 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR4090PT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR4090PT


parameter:


Repetitive reverse voltage peak Vrrm: 90V


Maximum average rectified current Io: 40A


Maximum forward surge current I FSM: 350A


Forward voltage drop VF: 0.8V when IF=20A


Maximum feedback current IR: 50uA when VR=90V


Package: TO-3P/TO-247AD


MBR4090PT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-247AD
package instructionR-PSFM-T3
Contacts2
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current350 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current40 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR4090PT Preview

Download Datasheet
MBR4040PT SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
40 to 200 Volts
CURRENT
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
0.600(15.25)
0.580(14.75)
0.142(3.60)
0.125(3.20)
0.640(16.25)
0.620(15.75)
0.199(5.05)
0.175(4.45)
40 Amperes
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling, and polarlity protection applications.
• Lead free in comply with EU RoHS 2002/95/EC directives.
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.839(21.30)
0.819(20.80)
0.095(2.40)
0.170(4.30)
0.145(3.70)
0.798(20.25)
0.777(19.75)
0.030(0.75)
0.017(0.45)
MECHANICAL DATA
• Case: TO-247AD/TO-3P molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.224 ounce, 6.367 gram
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RA ME TE R
Maxi mum Recurrent P ea k Reverse Voltag e
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A vera ge F orward C urrent
P eak F orward S urge C urrent : 8.3ms si ngle
half si ne -wave sup eri mpose d on rated lo ad
(JE D E C method )
Maxi mum F o rward Voltage at 20A per leg
Maxi mum D C Reverse C urrent at
Rated D C B lo cki ng Vo lta ge
Typi cal Therma l Resi stance
Operati ng Juncti on and S torag e
Temp erature Range
T
J
=25
O
C
T
J
=125
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
,T
STG
-5 5 to + 15 0
MB R4 04 0P T MB R40 45 P T MB R4 05 0P T MB R4 06 0P T MB R40 80 P T MB R4 09 0P T MB R40 10 0P T MB R40 15 0P T MB R40 20 0P T
UNITS
V
V
V
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
40
90
63
90
100
70
100
150
105
150
200
140
200
350
A
0.7
0.79
0 .1
20
1.2
0 .8
0.05
20
0.9
V
mA
O
C /W
O
-65 to +175
C
Note :
Both Bonding and Chip structure are available.
December 12,2011-REV.04
PAGE . 1
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