MBR3150_R2_00001 datasheet, PDF

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MBR3150_R2_00001: DescriptionRectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR3150_R2_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,

MBR3150_R2_00001 Parametric

Parameter Name	Attribute value
Maker	PANJIT
package instruction	O-PALF-W2
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.9 V
JEDEC-95 code	DO-201AD
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak forward current	80 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Maximum repetitive peak reverse voltage	150 V
Maximum reverse current	50 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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MBR340 SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Low Power Loss, High Efficiency

• High Surge Capability

• High Current Capability and Low Forward Voltage Drop

• Surge Overload Rating to 80A Peak

0.375(9.5)

1.0(25.4)MIN.

40 to 200 Volts

CURRENT

3.0 Amperes

• Guard Ring Die Construction for Transient Protection

0.052(1.3)

0.048(1.2)

and Polarity Protection Applications .

• Lead free in comply with EU RoHS 2011/65/EU directives

0.285(7.2)

• For Use in Low Voltage,High Frequency Inverters ,Free Wheeling ,

• Case: DO-201AD Molded plastic

• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026

• Polarity: Color band denotes cathode

• Mounting Position: Any

• Weight: 0.0395 ounce, 1.122 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

PA RA ME TE R

Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e

Ma xi mum R MS V o lta g e

Ma xi mum D C B lo c k i ng V o lta g e

A ve ra g e Re c ti fi e d O utp ut C urre nt

(S e e F i g ure 1 )

No n-Re p e ti ti ve P e a k F o r wa rd S urg e C urre nt : 8 . 3 ms

s i ng le ha lf s i ne -wa ve s up e ri mp o s e d o n ra te d lo a d

F o rwa rd Vo lta g e a t 3 . 0 A ( No te 3 )

P e a k R e ve rs e C urre nt a t Ra te d D C

B lo c k i ng Vo lta g e

Typ i c a l The rma l Re s i s ta nc e ( No te 2 )

(No te 1 )

Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e

=2 5

=1 0 0

S YMB OL

RRM

RMS

F S M

θJ

S TG

1.0(25.4)MIN.

MECHANICAL DATA

0.210(5.3)

0.188(4.8)

MB R3 4 0

MB R3 4 5 MB R3 5 0 MB R3 6 0 MB R3 8 0 MB R3 9 0 MB R3 1 0 0 MB R3 1 5 0 MB R3 2 0 0

UNITS

3 1 .5

3 .0

100

150

105

150

200

140

200

0 .7 0

0 .7 4

0 .0 5

0 .8 0

0.9

C / W

-5 5 to +1 5 0

-6 5 t o + 1 5 0

Notes :

1. Measured at ambient temperature at a distance of 9.5mm from the case

2. Minimum Pad Area

3. Pulse test : 300μs pulse width , 1% duty cycle

August 18,2010-REV.01

PAGE . 1

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