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MBR3150_AY_00001

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,
CategoryDiscrete semiconductor    diode   
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR3150_AY_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 150V V(RRM), Silicon, DO-201AD,

MBR3150_AY_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-201AD
JESD-30 codeO-PALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Maximum repetitive peak reverse voltage150 V
Maximum reverse current50 µA
surface mountNO
technologySCHOTTKY
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1

MBR3150_AY_00001 Preview

Download Datasheet
MBR340 SERIES
SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
• Low Power Loss, High Efficiency
• High Surge Capability
• High Current Capability and Low Forward Voltage Drop
• Surge Overload Rating to 80A Peak
0.375(9.5)
1.0(25.4)MIN.
40 to 200 Volts
CURRENT
3.0 Amperes
• Guard Ring Die Construction for Transient Protection
0.052(1.3)
0.048(1.2)
and Polarity Protection Applications .
• Lead free in comply with EU RoHS 2011/65/EU directives
0.285(7.2)
• For Use in Low Voltage,High Frequency Inverters ,Free Wheeling ,
• Case: DO-201AD Molded plastic
• Terminals: Axial leads, solderable per MIL-STD-750,Method 2026
• Polarity: Color band denotes cathode
• Mounting Position: Any
• Weight: 0.0395 ounce, 1.122 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
PA RA ME TE R
Ma xi mum Re c urre nt P e a k Re ve rs e Vo lta g e
Ma xi mum R MS V o lta g e
Ma xi mum D C B lo c k i ng V o lta g e
A ve ra g e Re c ti fi e d O utp ut C urre nt
(S e e F i g ure 1 )
No n-Re p e ti ti ve P e a k F o r wa rd S urg e C urre nt : 8 . 3 ms
s i ng le ha lf s i ne -wa ve s up e ri mp o s e d o n ra te d lo a d
F o rwa rd Vo lta g e a t 3 . 0 A ( No te 3 )
P e a k R e ve rs e C urre nt a t Ra te d D C
B lo c k i ng Vo lta g e
Typ i c a l The rma l Re s i s ta nc e ( No te 2 )
(No te 1 )
(No te 1 )
Op e ra ti ng J unc ti o n a nd S to ra g e Te mp e ra ture Ra ng e
T
J
=2 5
O
C
T
J
=1 0 0
O
C
S YMB OL
V
RRM
V
RMS
V
DC
I
O
I
F S M
V
F
I
R
R
θJ
A
R
θJ
C
R
θJ
L
T
J
,T
S TG
1.0(25.4)MIN.
MECHANICAL DATA
0.210(5.3)
0.188(4.8)
MB R3 4 0
MB R3 4 5 MB R3 5 0 MB R3 6 0 MB R3 8 0 MB R3 9 0 MB R3 1 0 0 MB R3 1 5 0 MB R3 2 0 0
UNITS
V
V
V
A
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
3 .0
80
90
63
90
100
70
100
150
105
150
200
140
200
0 .7 0
0 .7 4
0 .0 5
10
50
12
15
0 .8 0
0.9
V
mA
O
C / W
O
-5 5 to +1 5 0
-6 5 t o + 1 5 0
C
Notes :
1. Measured at ambient temperature at a distance of 9.5mm from the case
2. Minimum Pad Area
3. Pulse test : 300μs pulse width , 1% duty cycle
August 18,2010-REV.01
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