MBR3050PT datasheet, PDF - EEWORLD Datasheet

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MBR3050PT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR3050PT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR3050PT

parameter:

Repetitive reverse voltage peak Vrrm: 50V

Maximum average rectified current Io: 30A

Maximum forward surge current I FSM: 275A

Forward voltage drop VF: 0.75V when IF=15A

Maximum feedback current IR: 50uA when VR=50V

Package: TO-3P/TO-247AD

MBR3050PT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-247AD
package instruction	R-PSFM-T3
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	275 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	30 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR3040PT SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvoltage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

0.087(2.20)

0.070(1.80)

0.126(3.20)

0.110(2.80)

0.050(1.25)

0.045(1.15)

0.142(3.60)

0.125(3.20)

0.640(16.25)

0.620(15.75)

0.199(5.05)

0.175(4.45)

40 to 200 Volts

CURRENT

30 Amperes

0.600(15.25)

0.580(14.75)

0.839(21.30)

0.819(20.80)

0.095(2.40)

0.170(4.30)

0.145(3.70)

0.798(20.25)

0.777(19.75)

MECHANICAL DATA

• Case: TO-247AD/TO-3P molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.2245 ounces, 6.3673 grams.

0.030(0.75)

0.017(0.45)

0.225(5.70)

0.204(5.20)

0.225(5.70)

0.204(5.20)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Maxi mum Recurrent P eak Reverse Voltage

Maxi mum RMS Voltage

Maxi mum D C B locki ng Voltage

Maxi mum A verage F orward C urrent

P eak F orward S urge C urrent : 8.3ms si ngle

half si ne-wave superi mposed on rated load

(JE D E C method)

Maxi mum F orward Voltage at 15A per leg

Maxi mum D C Reverse C urrent at

Rated D C B locki ng Voltage

Typi cal Thermal Resi sta nce

Operati ng Juncti on and S torage Temperature

Range

Note :

S YMB OL

RRM

RMS

F(AV )

FS M

JC

S TG

MBR3 040 P T MB R30 45P T MB R30 50 PT MB R306 0P T MB R30 80P T MBR3 090 P T MB R30 100 P T MB R301 50 PT MBR3 02 00P T

UNITS

31.5

100

150

105

150

200

140

200

275

0.7

0.75

0.1

1.4

0.8

0.05

0.9

=25

=125

C /W

-50 to + 150

-65 to +175

Both Bonding and Chip structure are available.

August 30,2010-REV.02

PAGE . 1

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