MBR30200FCT datasheet, PDF - EEWORLD Datasheet

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MBR30200FCT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR30200FCT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR30200FCT

parameter:

Repetitive reverse voltage peak Vrrm: 200V

Maximum average rectified current Io: 30A

Maximum forward surge current I FSM: 275A

Forward voltage drop VF: 0.9V when IF=15A

Maximum feedback current IR: 50uA when VR=200V

Package: ITO-220AB

MBR30200FCT Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	PANJIT
Parts packaging code	TO-220AB
package instruction	ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	275 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	30 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum repetitive peak reverse voltage	200 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED

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MBR3040FCT SERIES

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

0.112(2.85)

0.100(2.55)

40 to 200 Volts

CURRENT

30 Amperes

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Metal silicon junction, majority carrier conduction

• Low power loss, high efficiency.

• High current capability

• Guardring for overvoltage protection

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

• In compliance with EU RoHS 2002/95/EC directives

0.272(6.9)

0.248(6.3)

• Plastic package has Underwriters Laboratory

0.406(10.3)

0.381(9.7)

0.134(3.4)

0.118(3.0)

0.189(4.8)

0.165(4.2)

0.130(3.3)

0.114(2.9)

0.606(15.4)

0.583(14.8)

MECHANICAL DATA

• Case: ITO-220AB molded plastic

• Terminals: solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Mounting Position: Any

• Weight: 0.055 ounces, 1.5615 grams.

0.055(1.4)

0.039(1.0)

0.055(1.4)

0.039(1.0)

0.028(0.7)

0.019(0.5)

0.100(2.55)

0.177(4.5)

0.137(3.5)

0.543(13.8)

0.512(13.0)

0.114(2.9)

0.098(2.5)

0.100(2.55)

0.027(0.67)

0.022(0.57)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PARAME TE R

Maxi mum Recurrent Peak Reverse Voltage

Maxi mum RMS Voltage

Maxi mum D C Blocki ng Voltage

Maxi mum Average Forward C urrent

Peak F orward S urge C urrent :8.3ms si ngle

half si ne-wave superi mposed on rated load

(JED E C method)

Maxi mum Forward Voltage at 15A per leg

Maxi mum D C Reverse C urrent

at Rated D C Blocki ng Voltage

Typi cal Thermal Resi stance

Operati ng Juncti on and

StorageTemperature Range

=25

=125

SYMBOL

RRM

RMS

F (AV )

F SM

JC

S TG

MBR3 04 0F C T MB R30 45 FC T MB R3 05 0F C T MB R3 06 0F C T MB R3 08 0F C T MB R30 90 FC T MB R30 10 0F C T MB R30 15 0F C T MBR3 02 00 FC T

UNITS

31.5

100

150

105

150

200

140

200

275

0.7

0.75

0.1

1.4

0.8

0.05

0.9

C /W

-5 5 to + 15 0

-65 to + 175

Note :

Both Bonding and Chip structure are available.

August 30,2010-REV.02

PAGE . 1

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