MBR25100FCT datasheet, PDF - EEWORLD Datasheet

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MBR25100FCT: DescriptionSchottky diodes; CategoryDiscrete semiconductor diode; File Size49KB，2 Pages; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR25100FCT Overview

Schottky diodes

Features

Product Name: Schottky Diode

Product model: MBR25100FCT

parameter:

Repetitive reverse voltage peak Vrrm: 100V

Maximum average rectified current Io: 25A

Maximum forward surge current I FSM: 200A

Forward voltage drop VF: 0.8V when IF=12.5A

Maximum feedback current IR: 50uA when VR=100V

Package: ITO-220AB

MBR25100FCT Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-220AB
package instruction	ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Other features	FREE WHEELING DIODE, LOW POWER LOSS
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.8 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	200 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	20 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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MBR2540FCT~MBR25200FCT

SCHOTTKY BARRIER RECTIFIERS

VOLTAGE

FEATURES

0.112(2.85)

0.100(2.55)

0.272(6.9)

0.248(6.3)

40 to 200 Volts

CURRENT

25 Amperes

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-O.

Flame Retardant Epoxy Molding Compound.

• Exceeds environmental standards of MIL-S-19500/228

• Low power loss, high efficiency.

• Low forwrd voltge, high current capability

• High surge capacity.

• For use in low voltage,high frequency inverters

free wheeling , and polarlity protection applications.

0.406(10.3)

0.381(9.7)

0.134(3.4)

0.118(3.0)

0.189(4.8)

0.165(4.2)

0.130(3.3)

0.114(2.9)

0.606(15.4)

0.583(14.8)

MECHANCEAL DATA

• Case: ITO-220AB Molded plastic

• Terminals: Solder plated, solderable per MIL-STD-750, Method 2026

• Polarity: As marked.

• Standard packaging: Any

• Weight: 0.055 ounces, 1.5615 grams.

0.055(1.4)

0.039(1.0)

0.055(1.4)

0.039(1.0)

0.028(0.7)

0.019(0.5)

0.100(2.55)

0.177(4.5)

0.137(3.5)

0.543(13.8)

0.512(13.0)

• Lead free in comply with EU RoHS 2002/95/EC directives.

0.114(2.9)

0.098(2.5)

0.100(2.55)

0.027(0.67)

0.022(0.57)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.

For capacitive load, derate current by 20%

PA RA ME TE R

Maxi mum Recurrent Peak Reverse Voltage

Maxi mum RMS Voltage

Maxi mum D C B locki ng Voltage

Maxi mum A verage Forward C urrent (S ee fi g.1)

P eak F orward Surge C urrent : 8.3ms si ngle half si ne-

wave superi mposed on rated load (JED E C method)

Maxi mum F orward Voltage at 12.5A, per leg

Maxi mum D C Reverse C urrent T

J

=25

O

C

at Rated D C Bloc ki ng Voltage T

J

=125

O

C

Typi cal Thermal Res i stanc e

Operati ng Juncti on and Storage Tempe rature Range

S YMB OL

V

RRM

V

RMS

V

DC

I

F(AV )

I

FS M

V

F

I

R

θJC

T

J

,T

S TG

MB R254 0FC T MB R2545 FC T MB R2550 FC T MB R2560 FC T MB R2580 FC T MB R2590 FC T MB R2 5100 FC T MB R2515 0FC T MB R2520 0FC T

UNITS

V

A

40

28

40

45

31.5

45

50

35

50

60

42

60

80

56

80

25

200

90

63

90

100

70

100

150

105

150

200

140

200

0.7

0.75

0.05

20

2

0.8

0.9

V

mA

O

C /W

O

-50 to + 150

-65 to +175

C

NOTES:

Both Bonding and Chip structure are available.

December 28,2011-REV.03

PAGE . 1

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