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MBR20H150CT_T0_00001

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size456KB,6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MBR20H150CT_T0_00001 Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 10A, 150V V(RRM), Silicon, TO-220AB,

MBR20H150CT_T0_00001 Parametric

Parameter NameAttribute value
MakerPANJIT
Reach Compliance Codenot_compliant
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.85 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-55 °C
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage150 V
Maximum reverse current0.55 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE

MBR20H150CT_T0_00001 Preview

Download Datasheet
P
MBR20H150CT \ MBR20H150FCT \ MBR20H150DC
ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS
Voltage
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
Low power loss, high efficiency.
High current capability
High junction temperature capability
Lead free in compliance with EU RoHS 2011/65/EU directive
Green molding compound as per IEC61249 Std. . (Halogen Free)
150 V
Current
20 A
TO-220AB
ITO-220AB
Mechanical Data
Case: TO-220AB, ITO-220AB, TO-263 package
Terminals: solder plated, solderable per MIL-STD-750,Method 2026
TO-220AB Weight: 0.067 ounces, 1.89 grams.
ITO-220AB Weight: 0.056 ounces, 1.6 grams.
TO-263 Weight: 0.051 ounces, 1.46 grams.
Marking: Part number
TO-220AB
ITO-220AB
TO-263
150V
MBR20H150CT
MBR20H150FCT
MBR20H150DC
TO-263
Maximum Ratings And Electrical Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum rms voltage
Maximum dc blocking voltage
Maximum average forward rectified per device
current
per diode
Peak forward surge current : 8.3ms single half sine-
wave superimposed on rated load per diode
Maximum forward voltage at 10A per diode
Maximum dc reverse current
at rated dc blocking voltage
T
J
=25
o
C
T
J
=125
o
C
TO-220AB(Note 1)
Typical thermal resistance
TO-263(Note 1)
ITO-220AB(Note 1)
Operating junction temperature range
Storage temperature range
Note : 1. Semi-infinite heatsink
T
J
T
STG
R
θJC
SYMBOL
V
RRM
V
RMS
V
R
I
F(AV)
I
FSM
V
F
I
R
150V
150
105
150
20
10
200
0.85
0.55
1
3
3
7
-55 to +175
-55 to +175
o
o
o
o
UNIT
V
V
V
A
A
V
A
mA
C/W
C
C
October 14,2016-REV.01
Page 1
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