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MBR2090FCT

Description
Schottky diodes
CategoryDiscrete semiconductor    diode   
File Size60KB,3 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/
Environmental Compliance

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

Download Datasheet Parametric View All

MBR2090FCT Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: MBR2090FCT


parameter:


Repetitive reverse voltage peak Vrrm: 90V


Maximum average rectified current Io: 20A


Maximum forward surge current I FSM: 200A


Forward voltage drop VF: 0.8V when IF=10A


Maximum feedback current IR: 50uA when VR=90V


Package: ITO-220AB


MBR2090FCT Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerPANJIT
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current200 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current20 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage90 V
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

MBR2090FCT Preview

Download Datasheet
MBR2040FCT SERIES
20 AMPERES SCHOTTKY BARRIER RECTIFIERS
VOLTAGE
FEATURES
0.112(2.85)
0.100(2.55)
0.134(3.4)
0.118(3.0)
0.272(6.9)
0.248(6.3)
40 to 200 Volts
CURRENT
20 Amperes
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvlotage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
0.406(10.3)
0.381(9.7)
0.189(4.8)
0.165(4.2)
0.130(3.3)
0.114(2.9)
0.606(15.4)
0.583(14.8)
MECHANICAL DATA
• Case: ITO-220AB molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.055 ounces, 1.5615 grams.
0.177(4.5)
0.137(3.5)
• Lead free in comply with EU RoHS 2002/95/EC directives
0.055(1.4)
0.039(1.0)
0.055(1.4)
0.039(1.0)
0.028(0.7)
0.019(0.5)
0.100(2.55)
0.543(13.8)
0.512(13.0)
0.114(2.9)
0.098(2.5)
0.100(2.55)
0.027(0.67)
0.022(0.57)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
PA RAME TE R
Maxi mum Recurre nt P eak Re verse Voltage
Maxi mum RMS Voltage
Maxi mum D C Blo cki ng Voltage
Maxi mum A ve ra ge F orward C urrent
(S ee fi g .1)
Pea k F orward S urg e C urrent : 8.3ms si ngle
half si ne-wa ve s uperi mposed on ra te d load
(J ED E C method)
Maxi mum F o rward Voltage at 10A , pe r leg
Maxi mum D C Re verse C urre nt T
J
=25
O
C
at Rated D C Blo cki ng Voltage T
J
=125
O
C
Typi ca l The rmal Res i s tance
Ope ra ting and S torage J unc ti o n
Temperature Range
SYMB OL
V
RRM
V
RMS
V
DC
I
F (AV )
I
F S M
V
F
I
R
R
θJ
C
T
J
,T
S TG
MB R2040FC T MB R2045F C T MB R2050F C T MB R2060F C T MB R208 0FC T MB R2090FC T MB R20100FC T MB R20150F C T MB R20200 FC T
UNITS
V
V
V
A
40
28
40
45
31.5
45
50
35
50
60
42
60
80
56
80
20
90
63
90
10 0
70
10 0
1 50
1 05
1 50
20 0
140
20 0
200
A
0.7
0.75
0.0 5
20
2
0.8
0.9
V
mA
O
C / W
O
-55 to + 150
-65 to +175
C
Notes :
Both Bonding and Chip structure are available.
April 22,2011-REV.04
PAGE . 1
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