MBR20200FCT datasheet, PDF - EEWORLD Datasheet

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MBR20200FCT: DescriptionDC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2 x 10A Forward voltage drop (Vf): 950mV @ 10A; CategoryDiscrete semiconductor Schottky diode; File Size188KB，2 Pages; ManufacturerChongqing Pingwei Enterprise co.,Ltd.; Websitehttp://www.perfectway.cn; Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).

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MBR20200FCT Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2 x 10A Forward voltage drop (Vf): 950mV @ 10A

MBR20200FCT Parametric

Parameter Name	Attribute value
DC reverse withstand voltage (Vr)	200V
Average rectified current (Io)	2 x 10A
Forward voltage drop (Vf)	950mV @ 10A

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MBR2020FCT THRU MBR20200FCT

20.0AMPS. SCHOTTKY BARRIER RECTIFIERS

FEATURE

.High

current capability

.Low

forward voltage drop

.Low

power loss, high efficiency

.High

surge capability

.High

temperature soldering guaranteed

260°C /10seconds, 0.25"(6.35mm)from case.

PI 1 2

ITO-220AB

Dim

MECHANICAL DATA

.Terminal:

Plated axial leads solderable per

MIL-STD 202E, method 208C

.Case:

Molded with UL-94 Class V-0 recognized

Flame Retardant Epoxy

.Polarity:

color band denotes cathode

.Mounting

position: any

Min

.571(14.5)

.383(9.72)

.110(2.80)

.133(3.38)

.512(13.0)

.028(0.7)

.114(2.9)

.268(6.8)

.162(4.1)

.102(2.6)

.018(0.45)

.097(2.46)

.89(2.25)

Max

.610(15.5)

.406(10.3)

.126(3.2)

.162(4.1)

.551(14.0)

.035(0.90)

.138(3.5)

.291(7.4)

.185(4.7)

.110(2.8)

.026(0.65)

.113(2.86)

.113(2.85)

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz,resistive or inductive load.

For capacitive load, derate current by 20%

Type Number

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified Current

at T

=100°C

Peak Forward Surge Current 8.3ms single half

sine-wave superimposed on rated load (JEDEC

method)

Maximum Forward Voltage at 10.0A DC

Maximum DC Reverse Current

at rated DC blocking voltage

=25°C

=100°C

SYM

BOL

MBR

2020

FCT

MBR

2040

FCT

MBR

2050

FCT

MBR

2060

FCT

MBR

2080

FCT

MBR

20100

FCT

MBR

20150

FCT

MBR

20200

FCT

units

RRM

RMS

F(AV)

FSM

(JC)

STG

20.0

100

150

105

150

200

140

200

175.0

0.45

0.55

0.5

40.0

700

3.0

-55 to +150

-55 to +125

-55 to +150

0.70

0.85

0.1

10.0

300

0.95

°C /W

°C

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Storage Temperature

Operation JunctionTemperature

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal Resistance from Junction to Case Mounted on Heatsink

- 287 -

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