MBR1620(F,B,H,G,D)CT thru MBR16200(F,B,H,G,D)CT
16A Schottky Barrier Rectifier
FEATURE
High current capability
Low forward voltage drop
Low power loss, high efficiency
High surge capability
High ESD capability
High temperature soldering guaranteed:
260°
C/10s/0.25"(6.35mm) from case
TO-220AB
MBR16XXCT
ITO-220AB
MBR16XXFCT
TO-262
MBR16XXHCT
MECHANICAL DATA
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Mounting position: any
TO-263
MBR16XXBCT
TO-252
MBR16XXGCT
TO-251
MBR16XXDCT
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching mode
power supplies, freewheeling diodes, DC/DC converters and
polarity protection application.
Ratings at 25° ambient temperature unless otherwise specified, Single phase, half wave, 60Hz, resistive or inductive load.
C
For capacitive load, derate current by 20%.
MAXIMUM RATINGS
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
total device
Maximum Average Forward Rectified
Current at
T
C
=90°
C
per diode
Peak Forward Surge Current 8.3ms Single Half sine-wave
superimposed on rate load per diode (JEDEC method)
Junction Capacitance (Note1)
Storage Temperature Range
Operation Temperature Range
Symbol
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
STG
T
J
600
-55 to +150
-55 to +150
MBR
MBR
MBR
MBR
MBR
MBR
units
1620CT 1645CT 1660CT 16100CT 16150CT 16200CT
20
14
20
45
32
45
60
42
60
16.0
8.0
150
250
100
70
100
150
105
150
200
140
200
V
V
V
A
A
pF
°
C
°
C
ELECTRONICAL CHARACTERISTICS
Parameter
Maximum Forward Voltage Drop per diode at 8A (Note 2)
@
T
C
=25°
C
Maximum DC Reverse Current at rated
DC blocking voltage (Note 2)
@
T
C
=100°
C
Symbol
V
F
I
R
MBR
MBR
MBR
MBR
MBR
MBR
units
1620CT 1645CT 1660CT 16100CT 16150CT 16200CT
0.55
0.60
0.15
40.0
0.70
0.85
0.90
0.1
20.0
0.95
V
mA
THERMAL CHARACTERISTICS
Parameter
Typical Thermal Resistance (Note 3)
Symbol
R
th (JC)
ITO-220
3.2
TO-220
2.2
TO-262
TO-263
2.2
TO-251
TO-252
6.2
units
°
C/W
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc.
2. Pulse test: 300 μs pulse width, 1% duty cycle.
3. Thermal Resistance from Junction to Case Mounted on heatsink.
-
页码
-
Rev. 14-1
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