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MBR10150GCT

Description
DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 2 x 5A Forward voltage drop (Vf): 880mV @ 5A
CategoryDiscrete semiconductor    Schottky diode   
File Size235KB,3 Pages
ManufacturerChongqing Pingwei Enterprise co.,Ltd.
Websitehttp://www.perfectway.cn
Chongqing Pingwei Industrial Co., Ltd. is a power semiconductor IDM product company integrating chip design, packaging and testing, application and reliability testing services. The company takes power semiconductor devices as its industrial foundation, and has established product development, manufacturing and testing platforms for smart terminals, industrial control, Internet of Things, new energy vehicles, 5G communications, home appliances, satellite Internet, security electronics, green lighting and other market fields, providing high-reliability medium, low voltage and high voltage power devices, modules and other products and system solutions, always putting user needs first. Specializing in the production of various types of semiconductor devices (rectifier diodes, fast recovery diodes, TVS, Zener diodes, Schottky, rectifier bridges, MOSFET, IGBT, synchronous rectifier devices, SIC and GaN devices, etc.).
Download Datasheet Parametric View All

MBR10150GCT Overview

DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 2 x 5A Forward voltage drop (Vf): 880mV @ 5A

MBR10150GCT Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)150V
Average rectified current (Io)2 x 5A
Forward voltage drop (Vf)880mV @ 5A

MBR10150GCT Preview

Download Datasheet
MBR10150GCT&MBR10150DCT
MBR10150GCT&MBR10150DCT
10.0AMPS. SCHOTTKY BARRIER RECTIFIERS
FEATURE
.High
current capability
.Low
forward voltage drop
.Low
power loss, high efficiency
.High
surge capability
.High
temperature soldering guaranteed
260°C /10seconds, 0.25"(6.35mm)from case.
TO-252
MBR10150GCT
TO-251
MBR10150DCT
MECHANICAL DATA
.Case:
Molded with UL-94 Class V-0 recognized
Flame Retardant Epoxy
.Mounting
position: any
Single phase, half wave, 60Hz,resistive or inductive load.
For capacitive load, derate current by 20%
MAXIMUM RATINGS
(T
C
=25℃ unless otherwise noted)
Parameter
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified Current
at T
C
=100°C
Per Leg
Total device
Symbol
MBR10150GCT&MBR10150DCT
150
105
150
5.0
10.0
100.0
112
-55 to +150
Typ
Max
----
0.88
----
0.75
0.1
10
Units
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
C
J
T
J
,
T
STG
Peak Forward Surge Current 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 1)
Operation Junction Temperature and Storage Temperature
Per Leg
A
pF
°C
ELECTRICAL CHARACTERISTICS
-(per leg)
(T
A
=25℃ unless otherwise noted)
Parameter
Symbol
Test conditions
Units
T
J
=25℃
Forward voltage drop
V
F
T
J
=125℃
T
J
=25℃
T
J
=125℃
Reverse leakage current
I
R
I
F
=3A
I
F
=5A
I
F
=3A
I
F
=5A
V
R
=150V
V
R
=150V
Symbol
0.72
0.77
0.60
0.64
----
----
MBR10150GCT
6.5
V
mA
THERMAL CHARACTERISTICS
(T
C
=25℃ unless otherwise noted)
Parameter
Typical Thermal Resistance (Note 2)
MBR10150DCT
6.5
Units
°C /W
R
(JC)
Notes:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Case
Version1.0-2015.2
1
www.perfectway.cn
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