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MB320_R1_10001

Description
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size78KB,5 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MB320_R1_10001 Overview

Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-214AB, SMC, 2 PIN

MB320_R1_10001 Parametric

Parameter NameAttribute value
MakerPANJIT
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, LOW POWER LOSS
applicationEFFICIENCY
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.9 V
JEDEC-95 codeDO-214AB
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum repetitive peak reverse voltage200 V
Maximum reverse current50 µA
surface mountYES
technologySCHOTTKY
Terminal formC BEND
Terminal locationDUAL

MB320_R1_10001 Preview

Download Datasheet
MB34~MB320
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
CURRENT
40 to 200 Volts
3 Amperes
VOLTAGE
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O
• For surface mounted applications in order to optimize board space
• Metal to silicon rectifier. majority carrier conduction
• Low power loss,high efficiency
• High surge capacity
• For use in low voltage high frequency inverters, free wheeling,
and polarity protection applications
• Lead free in comply with EU RoHS 2002/95/EC directives
0.128(3.25)
0.108(2.75)
0.245(6.22)
0.220(5.59)
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.00)
0.008(0.203)
0.002(0.051)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic
Terminals: Solder plated, solderable per MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Standard packaging: 16mm tape (EIA-481)
Weight: 0.0082 ounce, 0.2325 gram
0.050(1.27)
0.030(0.76)
0.320(8.13)
0.305(7.75)
1
2
Cathode
Anode
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified. Resistive or inductive load.
PA RA ME TE R
Maxi mum Recurrent P eak Reverse Voltage
Maxi mum RMS Voltage
Maxi mum D C B locki ng Voltage
Maxi mum A verage Forward C urrent (S ee fi gure 1)
P eak Forward S urge C urrent :8.3ms si ngle half si ne-wave
superi mposed on rated load(JE D E C method)
Maxi mum Forward Voltage at 3.0A ( Note 1)
Maxi mum D C Reverse C urrent T
J
=25
O
C
at Rated D C B locki ng Voltage T
J
=100
O
C
Typi cal Thermal Resi stance ( Note 2)
O p e r a t i n g J u n c t i o n a n d S t o r a g e Te m p e r a t u r e
R a ng e
S YMB OL
V
R R M
V
R M S
V
D C
I
F ( A V )
I
F S M
V
F
I
R
R
θ
J L
R
θ
J A
T
J
, T
S T G
MB 34
MB 34A
MB 35
MB 36
MB 38
MB 39
MB 310
MB 315
MB 320
UNITS
V
V
V
A
A
40
28
40
45
3 1 .5
45
50
35
50
60
42
60
80
56
80
3.0
100
90
63
90
100
70
100
150
105
150
200
140
200
0.70
0.74
0.05
20
20
75
0.80
0.90
V
mA
O
C/W
O
-55 to +150
-65 to +175
C
NOTES:
1. Pulse Test with PW =300µsec, 1% Duty Cycle.
2. Mounted on P.C. Board with 8.0mm
2
(.013mm thick) copper pad areas.
October 2,2012-REV.05
PAGE . 1
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