M28SD(TO-92) datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> M28SD(TO-92)

M28SD(TO-92): DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size112KB，1 Pages; ManufacturerJCET; Websitehttp://www.cj-elec.com/; Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

Download Datasheet Parametric View All

M28SD(TO-92) Overview

Transistor

M28SD(TO-92) Parametric

Parameter Name	Attribute value
Maker	JCET
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99

M28SD(TO-92) Preview

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

TO – 92

M28S

TRANSISTOR (NPN)

1.EMITTER

FEATURES

High DC Current Gain and Large Current Capability

2.COLLECTOR

3.BASE

MAXIMUM RATINGS (T

=25℃ unless otherwise noted)

Symbo

CBO

CEO

EBO

θJA

stg

Parameter

Collector-Base Voltage

Collector-Emitter Sustaining Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

0.625

200

150

-55~+150

Unit

℃/W

℃

ELECTRICAL CHARACTERISTICS (T

=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Symbol

(BR)CBO

(BR) CEO

(BR)EBO

CBO

CEO

EBO

FE(1)

DC current gain

FE(2)

FE(3)

FE(4)

Collector-emitter saturation voltage

Transition frequency

CE(sat)

Test

conditions

Min

0.1

290

300

0.55

100

MHz

1000

Typ

Max

Unit

μA

= 0.1mA ,I

=1mA,I

=0.1mA,I

=40V,I

=20V,I

=5V,I

=1V, I

=1mA

=1V, I

=100mA

=10V, I

=300mA

=1V, I

=500mA

=600mA,I

=20mA

=10V,I

=50mA ,f=30MHz

CLASSIFICATION OF h

FE(2)

RANK

RANGE

300-550

500-700

650-1000

A,Dec,2010

More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Touchpad interface circuit (IBM ThinkPad T60)

DX1 type three-phase two-element reactive energy meter is connected to the circuit through a current transformer (1)

Motor phase loss automatic time delay protection circuit

Illuminance tester circuit

Sensitive Frequency Shift Demodulator Circuit

Precision clamped ultra-low frequency triangle wave oscillator

【NXP Rapid IoT Review】+⑦NXP Rapid IoT Review Summary: [i=s]This post was last edited by yin_wu_qing on 2019-1-20 16:21[/i] [size=4] After three weeks of experience, I feel that the development of NXP Rapid IoT kit is not very smooth. The original plan wa...; yin_wu_qing RF/Wirelessly

Fluke and universities jointly build laboratories: ...; 安泰测试设备 Test/Measurement

Can CAN bus load resistors be 0603 package chip resistors?: As shown in the figure below, please ask: 1. What is the total load resistance of CAN? 2. Can I use 0603 package chip resistors? Thank you!...; yhye2world Integrated technical exchanges

MicroPython driver porting of LIS2MDL magnetic field sensor: LIS2MDL is a magnetic field sensor that can test the magnetic field strength in three axes. LIS2MDL uses a standard I2C interface to read internal sensor data and set the working mode through register...; dcexpert MEMS sensors

IGBT DC voltage and current stabilizing power supply equipment solution requirements, seeking cooperation: I am new to this place and I am looking for partners or individuals. Requirements: IGBT high-frequency voltage and current stabilizing power supply, DC output capacity meets 0-36V 1000A constant curre...; Oo饿不死oO Creative Market

Watch the video, participate in the NXP quiz, and win wonderful gifts!: [align=center][url=https://cn.element14.com/nxp-quiz-promo][/url][/align] [align=center][color=rgb(51, 51, 51)][font=微软雅黑][size=4]From now until February 28, 2019[/size][/font][/color][/align] [align=...; eric_wang NXP MCU

Popular Components