EEWORLDEEWORLDEEWORLD

Part Number

Search

LNC08R160

Description
Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 60A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 16mΩ @ 30A, 10V Maximum power consumption Dispersion (Ta=25°C): 110W(Tc) Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size878KB,8 Pages
ManufacturerLonten Semiconductor Co., Ltd.
Websitehttp://www.lonten.cc
Longteng Semiconductor Co., Ltd. is a high-tech enterprise dedicated to the research and development and sales of new power semiconductor devices. The company regards technological innovation as the core competitiveness of enterprise development and has built a first-class R&D center and application testing laboratory in China. The company has passed the ISO9001-2015 quality system certification and applied for 83 patents in the field of power semiconductor device design and application. The company has built a first-class R&D center and laboratory in China. The company's super junction power field effect transistor (Super Junction VDMOS, Shielding Gate VDMOS), insulated gate bipolar transistor (IGBT), fast recovery diode (FRD) and other series of products have the advantages of high energy efficiency, high reliability and high cost performance. They have been widely used in many fields such as computer and server power supply, LED drive power supply, charger, adapter, TV board power supply, etc.; they continue to grow in the fields of new energy vehicle charging piles, on-board chargers, automotive motor drives, photovoltaic inverters, industrial inverters, UPS, and welding machine markets.
Download Datasheet Parametric View All

LNC08R160 Overview

Drain-source voltage (Vdss): 80V Continuous drain current (Id) (at 25°C): 60A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 16mΩ @ 30A, 10V Maximum power consumption Dispersion (Ta=25°C): 110W(Tc) Type: N-channel

LNC08R160 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)80V
Continuous drain current (Id) at 25°C60A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance16mΩ @ 30A,10V
Maximum power dissipation (Ta=25°C)110W(Tc)
typeN channel

LNC08R160 Preview

Download Datasheet
LNC08R160/LNE08R160
Lonten N-channel 80V, 60A, 16mΩ Power MOSFET
Description
These N-Channel enhancement mode power field
effect
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Product Summary
V
DSS
R
DS(on).max
@ V
GS
=10V
I
D
80V
16mΩ
60A
Pin Configuration
Features
80V,60A,R
DS(on).max
=16mΩ@V
GS
=10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
TO-220
TO-263
G
S
Applications
Motor Drives
UPS
DC-DC Converter
N-Channel MOSFET
Pb
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Continuous drain current ( T
C
= 25° )
C
T
C
= 25° unless otherwise noted
C
Symbol
V
DSS
I
D
Value
80
60
39
Unit
V
A
A
A
V
mJ
W
°
C
°
C
Continuous drain current ( T
C
= 100° )
C
Pulsed drain current
1)
Gate-Source voltage
Avalanche energy
2)
Power Dissipation ( T
C
= 25° )
C
Storage Temperature Range
Operating Junction Temperature Range
I
DM
V
GSS
E
AS
P
D
T
STG
T
J
240
±20
132
110
-55 to +150
-55 to +150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
R
θJC
R
θJA
Value
0.88
62
Unit
°
C/W
°
C/W
Version 1.0 , 2018
1
www.lonten.cc
Commonly used trigger adjustments
[size=4]The core of triggering is how to set the conditions. This is the most important part of using an oscilloscope, and it is also the part that many users find the most difficult to master. Let's ...
Jacktang Analogue and Mixed Signal
LIS2MDL array PCB engineering and code information for magnetic nail navigation AGV car
Code Engineering:PCB Engineering:References:For more information, please refer to this posthttps://en.eeworld.com/bbs/thread-1144944-1-1.html...
littleshrimp ST Sensors & Low Power Wireless Technology Forum
How to understand this parameter in the MOS tube specification?
How to understand the SOA curve parameters in the MOS tube specification ? How to read the SOA curve? What does it mean by safe working area ? Can any teacher tell me? Thank you...
kal9623287 Power technology
Why is it necessary to use a four-pin Kelvin connected resistor for current detection?
Why is it said that current detection requires a resistor with four-pin Kelvin connection? --------------https://zhuanlan.zhihu.com/p/78121100Figure 2 shows a resistor with a four-pin structure, with ...
QWE4562009 Test/Measurement
Purgatory Legend-12864 LCD War
Purgatory Legend-12864 LCD War...
雷北城 FPGA/CPLD
Live Review: How to Design High-Performance Servo Drives Using Infineon IGBT7
Live broadcast time: 2:00-3:30 pm, August 24 (Tuesday)Live broadcast topic: How to design high-performance servo drives using Infineon IGBT7Presentation document: Click here to downloadWatch replay: C...
EEWORLD社区 Motor Drive Control(Motor Control)

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号